Switching cepat dan modul IGBT 1200V 900A arus pendek
$1655-49 Piece/Pieces
$135≥50Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land |
Pelabuhan: | SHANGHAI |
$1655-49 Piece/Pieces
$135≥50Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land |
Pelabuhan: | SHANGHAI |
Model No: YZPST-G900WB120B6TC
Merek: Yzpst
Tempat Asal: Cina
VCES: 1200V
VGES: ±20V
IC TC=25℃: 880A
IC TC=95℃: 900A
ICM: 1200A
Ptot: 3125W
IF(AV): 900A
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid |
Contoh pada gamba | : | |
Unduh | : |
Modul IGBT 1200V 900A
P/N: YZPST-G900WB120B6TC
PRODUK FITUR
Chip IGBT (parit+FS)
Tegangan saturasi rendah dan koefisien suhu positif
Switching cepat dan arus ekor pendek
Dioda roda bebas dengan pemulihan terbalik yang cepat dan lembut
Termasuk indera suhu
APLIKASIKontrol motor AC
Kontrol Gerak/Servo
Inverter dan catu daya
Sel fotovoltaik/bahan bakar
Peringkat maksimum IGBT-Absolute ( T C = 25 ° C kecuali jika tidak ditentukan )
Symbol | Parameter/Test Conditions | Values | Unit | |
VCES | Collector Emitter Voltage | TJ=25℃ | 1200 | V |
VGES | Gate Emitter Voltage | ±20 | ||
IC | DC Collector Current | TC=25℃, TJmax =175℃ | 880 | |
TC=95℃, TJmax =175℃ | 900 | A | ||
ICM | Repetitive Peak Collector Current | tp=1ms | 1200 | |
Ptot | Power Dissipation Per IGBT | TC=25℃, TJmax =175℃ | 3125 | W |
Peringkat maksimum dioda-absolute ( T C = 25 ° C kecuali jika tidak ditentukan )
Symbol | Parameter/Test Conditions | Values | Unit | |
VRRM | Repetitive Reverse Voltage | TJ=25℃ | 1200 | V |
IF(AV) | Average Forward Current | 900 | A | |
IFRM | Repetitive Peak Forward Current | tp=1ms | 1200 | |
I2t | TJ =150℃, t=10ms, VR=0V | 45 | kA2s |
IGBT-INVERTER
Karakteristik listrik ( T C = 25 ° C kecuali jika tidak ditentukan )
Symbol | Parameter/Test Conditions | Min. | Typ. | Max. | Unit | ||
VGE(th) | Gate Emitter Threshold Voltage | VCE=VGE , IC=24mA | 5 | 5.8 | 6.5 | ||
Collector Emitter | IC=900A, VGE=15V, TJ=25℃ | 1.9 | 2.3 | ||||
VCE(sat) | Saturation Voltage | IC=900A, VGE=15V, TJ=125℃ | 2.2 | V | |||
IC=900A, VGE=15V, TJ=150℃ | 2.25 | ||||||
ICES | Collector Leakage Current | VCE=1200V, VGE=0V, TJ=25℃ | 1 | mA | |||
VCE=1200V, VGE=0V, TJ=150℃ | 10 | ||||||
IGES | Gate Leakage Current | VCE=0V,VGE=±20V, TJ=25℃ | -400 | 400 | nA | ||
RGint | Integrated Gate Resistor | 0.7 | Ω | ||||
Qg | Gate Charge | VCE=900V, IC=900A , VGE=15V | 3.1 | µC | |||
Cies | Input Capacitance | VCE=25V, VGE=0V, f =1MHz | 43.2 | nF | |||
Cres | Reverse Transfer Capacitance | 2.07 | nF | ||||
td(on) | Turn on Delay Time | VCC=600V,IC=900A RG =1.5Ω , | TJ=25℃ | 100 | ns | ||
VGE=±15V, | TJ=150℃ | 110 | ns | ||||
tr | Rise Time | Inductive Load | TJ=25℃ | 85 | ns | ||
TJ=150℃ | 95 | ns | |||||
td(off) | Turn off Delay Time | VCC=600V,IC=900A RG =1.5Ω , | TJ=25℃ | 530 | ns | ||
VGE=±15V, | TJ=150℃ | 580 | ns | ||||
tf | Fall Time | Inductive Load | TJ=25℃ | 65 | ns | ||
TJ=150℃ | 215 | ns | |||||
TJ=25℃ | 55 | mJ | |||||
Eon | Turn on Energy | TJ=125℃ | 85 | mJ | |||
VCC=600V,IC=900A RG =1.5Ω , | TJ=150℃ | 95 | mJ | ||||
VGE=±15V, | TJ=25℃ | 45 | mJ | ||||
Eoff | Turn off Energy | Inductive Load | TJ=125℃ | 58 | mJ | ||
TJ=150℃ | 63 | mJ | |||||
ISC | Short Circuit Current | tpsc≤10µs , VGE=15V | 2200 | A | |||
TJ=150℃,VCC=800V | |||||||
RthJC | Junction to Case Thermal Resistance (Per IGBT) | 0.048 | K /W |
Garis besar paket
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