Teknologi IGBT Parit VCE Low VCE 450A Modul IGBT 1700V

Teknologi IGBT Parit VCE Low VCE 450A Modul IGBT 1700V

Name: Modul IGBT GD450HFX170C6S
Uploaded: 2024-04-07T06:57:03+08:00
Description: Modul IGBT GD450HFX170C6S

$1605-49 Piece/Pieces

$120≥50Piece/Pieces

Jenis pembayaran:	L/C,T/T,Paypal
Inkoterm:	FOB,CFR,CIF
Transportasi:	Ocean,Land,Express,Others
Pelabuhan:	SHANGHAI

Option:

VCES:1700V
VRRM:1700V
ICM:900A
VGES:±20V
PD:2542W

Hubungi sekarang

Deskripsi Produk

Atribut Produk

Model No: YZPST-GD450HFX170C6S

Merek: Yzpst

Tempat Asal: Cina

VCES: 1700V

VGES: ±20V

ICM: 900A

PD: 2542W

VRRM: 1700V

IF: 450A

IFM: 900A

& pengiriman paket

Menjual unit	:	Piece/Pieces
Tipe paket	:	1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Contoh pada gamba	:
Unduh	:

Modul IGBT GD450HFX170C6S

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Deskripsi Produk

Modul IGBT

YZPST-450HFX170C6S

1700V/450A 2 dalam satu paket

Gambaran umum

Modul Daya IGBT menyediakan ultra

Kehilangan konduksi rendah serta kekasaran hubung singkat.

Mereka dirancang untuk aplikasi seperti

Inverter dan UPS umum.

Fitur
Teknologi IGBT parit VCE (SAT) rendah
Kemampuan Sirkuit Pendek 10μs
VCE (SAT) dengan koefisien suhu positif
Suhu persimpangan maksimum 175oC
Kasus induktansi rendah
Fast & Soft Reverse Reverse Anti-Parallel FWD
Baseplate tembaga terisolasi menggunakan teknologi DBC
Khas Aplikasi

Inverter untuk drive motor

AC dan DC Servo Drive Amplifier

Sumber daya tanpa hambatan

IGBT

Symbol	Description	Value	Unit
VCES	Collector-Emitter Voltage	1700	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC=25oC @ TC= 100oC	706 450	A
ICM	Pulsed Collector Current tp=1ms	900	A
PD	Maximum Power Dissipation @ T =175oC	2542	W

Dioda

Symbol	Description	Value	Unit
VRRM	Repetitive Peak Reverse Voltage	1700	V
IF	Diode Continuous Forward Current	450	A
IFM	Diode Maximum Forward Current tp=1ms	900	A

Modul

Symbol	Description	Value	Unit
Tjmax	Maximum Junction Temperature	175	oC
Tjop	Operating Junction Temperature	-40 to +150	oC
TSTG	Storage Temperature Range	-40 to +125	oC
VISO	Isolation Voltage RMS,f=50Hz,t=1min	4000	V

IGBT Karakteristik Tc = 25oc kecuali dinyatakan lain

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
		IC=450A,VGE=15V, Tj=25oC		1.85	2.2
		IC=450A,VGE=15V, Tj=25oC		1.85	2.2
VCE(sat)	Collector to Emitter	IC=450A,VGE=15V, Tj=125oC		2.25		V
	Saturation Voltage	IC=450A,VGE=15V, Tj=150oC		2.35
VGE(th)	Gate-Emitter Threshold Voltage	IC= 18.0mA,VCE=VGE, Tj=25oC	5.6	6.2	6.8	V
ICES	Collector Cut-Off	VCE=VCES,VGE=0V,			5	mA
ICES	Current	Tj=25oC			5	mA
IGES	Gate-Emitter Leakage Current	VGE=VGES,VCE=0V, Tj=25oC			400	nA
RGint	Internal Gate Resistance			1.67		Ω
Cies	Input Capacitance	VCE=25V,f=1MHz,		54.2		nF
Cres	Reverse Transfer	VGE=0V		1.32		nF
Cres	Capacitance			1.32		nF
QG	Gate Charge	VGE=- 15…+15V		4.24		μC
td(on)	Turn-On Delay Time			179		ns
tr	Rise Time			105		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC		680		ns
tf	Fall Time			375		ns
Eon	Turn-On Switching			116		mJ
Eon	Loss			116		mJ
Eoff	Turn-Off Switching			113		mJ
Eoff	Loss			113		mJ
td(on)	Turn-On Delay Time			208		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC		784		ns
tf	Fall Time			613		ns
Eon	Turn-On Switching			152		mJ
Eon	Loss			152		mJ
Eoff	Turn-Off Switching			171		mJ
Eoff	Loss			171		mJ
td(on)	Turn-On Delay Time			208		ns
tr	Rise Time			120		ns
td(off)	Turn-Off Delay Time	VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC		800		ns
tf	Fall Time			720		ns
Eon	Turn-On Switching			167		mJ
Eon	Loss			167		mJ
Eoff	Turn-Off Switching			179		mJ
Eoff	Loss			179		mJ
		tP≤10μs,VGE=15V,
ISC	SC Data	Tj=150oC,VCC= 1000V, VCEM≤1700V		1800		A

Dioda Karakteristik Tc = 25oc kecuali dinyatakan lain

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
	Diode Forward	IF=450A,VGE=0V,Tj=25oC		1.8	2.25
VF	Voltage	IF=450A,VGE=0V,Tj= 125oC		1.95		V
		IF=450A,VGE=0V,Tj= 150oC		1.9
Qr	Recovered Charge	VR=900V,IF=450A,		105		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj=25oC		198		A
IRM	Recovery Current			198		A
Erec	Reverse Recovery Energy			69		mJ
Qr	Recovered Charge	VR=900V,IF=450A,		187		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj= 125oC		578		A
IRM	Recovery Current			578		A
Erec	Reverse Recovery Energy			129		mJ
Qr	Recovered Charge	VR=900V,IF=450A,		209		μC
IRM	Peak Reverse	-di/dt=4580A/μs,VGE=- 15V Tj= 150oC		585		A
IRM	Recovery Current			585		A
Erec	Reverse Recovery Energy			150		mJ