YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Operasi frekuensi tinggi Modul All-SIC 1700V
Operasi frekuensi tinggi Modul All-SIC 1700V
Operasi frekuensi tinggi Modul All-SIC 1700V
Operasi frekuensi tinggi Modul All-SIC 1700V
Operasi frekuensi tinggi Modul All-SIC 1700V
Operasi frekuensi tinggi Modul All-SIC 1700V
Operasi frekuensi tinggi Modul All-SIC 1700V

Operasi frekuensi tinggi Modul All-SIC 1700V

$7905-19 Piece/Pieces

$660≥20Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Land
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-230B170F62

MerekYzpst

Tempat AsalCina

VDSmax1700V

ID Tc=25℃230A

ID Tc=100℃200A

VGSmax-10V/+25V

VGSop-5V/+20V

TJ TSTG-40℃+155℃

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Unduh :
SIC Modul 230B170F62
Deskripsi Produk
Modul Daya All-SIC P/N: YZPST-230B170F62 SIC Module
VDS = 1700V RDS (ON) = 7.5mΩ
Aplikasi
Pemanasan induksi
Inverter matahari dan angin
Konverter DC/AC
Fitur
Kerugian sangat rendah
Operasi frekuensi tinggi
Nol arus pemulihan terbalik dari dioda
Nol Turn-Off Tail Current dari MOSFET
Operasi perangkat yang biasa-biasa saja, gagal-aman

Kemudahan paralel

1700V 7.5 mΩ in one-package


Peringkat maksimum absolut (T c = 25 ℃ Kecuali ditentukan lain)

Parameter
Symbol Conditions Value Unit
Drain-source voltage VDSmax 1700 V
VGS=20V, Tc=25℃ 230
Continuous collector current ID VGS=20V, Tc=100 200 A
Gate- source voltage VGSmax Absolute maximum values -10V/+25V V
Gate-source voltage VGSop Recommended operational values -5V/+20V V
Operating Junction and Storage Temperature TJ TSTG -40~+155

Listrik Karakteristik (T C = 25Kecuali ditentukan lain)

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate threshold voltage VGSth ID =108mA 2 2.6 4 V
Zero gate voltage drain current IDSS VDS=1700V,VGS=0V 6 600 uA
Gate-source leakage current IGSS VGS=20 V 1500 nA
VGS=20V, IDS=230A 7.5 11.7 ma
On state resistance RDS(on) VGS=20V, IDS=230A,Tvj=150℃ 15 ma
Input capacitance Ciss 21.3 nF
Output capacitance Coss VGS=0V,VDS=1000V, VAC=25mV f=1MHz 0.99 nF
Reverse transfer capacitance Crss 0.04 nF
Gate-source charge QGS 324 nC
Gate-drain charge QGD VDS=1200V,VGS = +20V/-5V 150 nC
Total gate charge QG ID =300 A 1158 nC
Turn-on delay time td(on) 27 ns
ID =180A
Rise time tr VDS =1200V 32 ns
Turn-off delay time td(off) VGS = +20V/-5V 36 ns
Fall time tf RG= 2.5a 10 ns
Energy dissipation during turn-on time ID =180A
Eon VDS =1200V 1.2 mJ
VGS = +20V/-5V
RG= 2.5a
Energy dissipation during turn-off time Eoff L=200uH 2 mJ
IF=300A 1.6 1.9 V
Diode forward voltage VSD IF=300A,Tvj=150℃ 2.2 2.8 V

Karakteristik modul CS (T C = 25 ℃ Kecuali ditentukan lain)

Parameter Value
Symbol Conditions Min. Typ. Max. Unit
Case isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum junction temperature Tjmax 175
Operating junction temperature Tvj op -40 150
Storage temperature Tstg -40 125
Module electrodes torque Mt Recommended(M6) 3 6
Module to heatsink torque Ms Recommended(M6) 3 6 Nm
Weight of module G 300 g

Sirkuit Diagram

Circuit Diagram



Dimensi paket

Package Dimensions


Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Operasi frekuensi tinggi Modul All-SIC 1700V
苏ICP备05018286号-1
Kirim permintaan
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Kirim