YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT

Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT

$1905-99 Piece/Pieces

$140≥100Piece/Pieces

Jenis pembayaran:L/C,Paypal,T/T
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Land,Express,Others
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-600HFX170C6S

MerekYzpst

Tempat AsalCina

VCES1700V

VGES±20V

ICM1200A

PD4166W

VRRM1700V

IF600A

IFM1200A

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Contoh pada gamba :
Unduh :
Modul IGBT GD600HFX170C6S
Deskripsi Produk
Modul IGBT YZPST-600HFX170C6S

1700V/600A 2 dalam satu paket

Gambaran umum
Modul Daya IGBT menyediakan ultra
Kehilangan konduksi rendah serta kekasaran hubung singkat.
Mereka dirancang untuk aplikasi seperti
Inverter dan UPS umum.

YZPST-GD600HFX170C6S
Fitur
. Teknologi IGBT parit VCE (SAT) rendah
. Kemampuan Sirkuit Pendek 10μs
. VCE (SAT) dengan koefisien suhu positif
. Suhu persimpangan maksimum 175oC
. Kasus induktansi rendah
. Fast & Soft Reverse Reverse Anti-Parallel FWD
. Baseplate tembaga terisolasi menggunakan teknologi DBC

Aplikasi khas
. Inverter untuk drive motor
. AC dan DC Servo Drive Amplifier
. Sumber daya tanpa hambatan

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current   TC=25oC

 TC= 100oC

1069

600

A

ICM

Pulsed Collector Current  tp=1ms

1200

A

PD

Maximum Power Dissipation   T =175oC

4166

W

Dioda

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1700

V

IF

Diode Continuous Forward Current

600

A

IFM

Diode Maximum Forward Current  tp=1ms

1200

A

Modul

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage  RMS,f=50Hz,t=1min

4000

V

IGBT Karakteristik Tc = 25oc kecuali dinyatakan lain

Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC=600A,VGE=15V, Tj=25oC 1.85 2.2
VCE(sat) Collector to Emitter IC=600A,VGE=15V, Tj=125oC 2.25 V
Saturation Voltage IC=600A,VGE=15V, Tj=150oC 2.35
VGE(th) Gate-Emitter Threshold Voltage IC= 12.0mA,VCE=VGE, Tj=25oC 5.6 6.2 6.8 V
ICES Collector Cut-Off VCE=VCES,VGE=0V, 5 mA
Current Tj=25oC
IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25oC 400 nA
RGint Internal Gate Resistance 1.3 Ω
Cies Input Capacitance VCE=25V,f=1MHz, 72.3 nF
Cres Reverse Transfer VGE=0V 1.75 nF
Capacitance
QG Gate Charge VGE=- 15…+15V 5.66 μC
td(on) Turn-On Delay Time 170 ns
tr Rise Time 67 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj=25oC 527 ns
tf Fall Time 138 ns
Eon Turn-On Switching 154 mJ
Loss
Eoff Turn-Off Switching 132 mJ
Loss
td(on) Turn-On Delay Time 168 ns
tr Rise Time 80 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj= 125oC 619 ns
tf Fall Time 196 ns
Eon Turn-On Switching 236 mJ
Loss
Eoff Turn-Off Switching 198 mJ
Loss
td(on) Turn-On Delay Time 192 ns
tr Rise Time 80 ns
td(off) Turn-Off Delay Time VCC=900V,IC=600A,  RG= 1.0Ω,VGE=±15V, Tj= 150oC 640 ns
tf Fall Time 216 ns
Eon Turn-On Switching 259 mJ
Loss
Eoff Turn-Off Switching 215 mJ
Loss
tP≤10μs,VGE=15V,
ISC SC Data Tj=150oC,VCC= 1000V, VCEM≤1700V 2400 A
Dimensi paket

YZPST-GD600HFX170C6S(7)

Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Kasus Induktansi Rendah 600HFX170C6S 1700V 600A Modul IGBT
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