YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A
Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A
Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A
Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A
Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A
Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A

Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A

$1152-99 Piece/Pieces

$82≥100Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-450B120E53

MerekYzpst

VCES1200V

IC450m

ICRM900m

VGES±20V

Ptot3000W

& pengiriman paket
Menjual unit : Piece/Pieces
Unduh :
Modul IGBT YZPT-450B120E53
Deskripsi Produk

YZPST-450B120E53

Modul IGBT
Aplikasi
Inverter untuk drive motor
penguat drive MC dan DC Servo
UPS (catu daya tidak terputus)
Mesin pengelasan switching lunak

FNATURNS
VCE rendah (SAT) dengan teknologi SPT+
VCE (SAT) dengan koefisien suhu positif
Termasuk Fast & Soft Recovery Anti-Parallel FWD
Kemampuan Sirkuit Pendek Tinggi (10US)
Struktur modul induktansi rendah
1200V IGBT Module 450A

Ratmn maxmmum absolut


Parameter

Symbol

CondMtMons

Value

UnMt

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mm, Tvj=25

1200

V

Continuous Collector Current

IC

Tc=100

450

m

Peak Collector Current

ICRM

ICRM =2IC

900

m

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

3000

W

IGBT karaktermstmcs

Parameter

 

Symbol

 

CondMtMons

 

Value

 

UnMt

MMn.

Typ.

Max.

 

Gate-emitter Threshold Voltage

VGE(th)

VGE=VCE, IC =3mm,Tvj=25

5.0

6.2

7.0

V

 

Collector-Emitter Cut-off Current

 

ICES

VCE=1200V,VGE=0V, Tvj=25

 

 

1.0

mm

VCE=1200V,VGE=0V, Tvj=125

 

 

5.0

mm

Collector-Emitter Saturation Voltage

 

VCE(sat)

Ic=450m,VGE=15V, Tvj=25

 

1.85

 

V

Ic=450m,VGE=15V, Tvj=125

 

2.05

 

V

Input Capacitance

Cies

 

VCE=25V,VGE =0V,

f=1MHz, Tvj=25

 

31.8

 

nF

Output Capacitance

Coes

 

2.13

 

nF

Reverse Transfer Capacitance

Cres

 

1.48

 

nF

Internal Gate Resistance

Rgint

 

 

0.7

 

Ω

Turn-on Delay Time

td(on)

 

 

IC =450 m VCE = 600 V VGE = ±15V RG =3.3Ω

Tvj=25

 

320

 

ns

Rise Time

tr

 

165

 

ns

Turn-off Delay Time

td(off)

 

650

 

ns

Fall Time

tf

 

124

 

ns

Energy Dissipation During Turn-on

Time

Eon

 

35

 

mJ

Energy Dissipation During Turn-off

Time

Eoff

 

42

 

mJ

Turn-on Delay Time

td(on)

 

 

 

IC =450m VCE = 600 V VGE = ±15V RG =3.3Ω

Tvj=125

 

350

 

ns

Rise Time

tr

 

193

 

ns

Turn-off Delay Time

td(off)

 

720

 

ns

Fall Time

tf

 

156

 

ns

Energy Dissipation During Turn-on

Time

Eon

 

55

 

mJ

Energy Dissipation During Turn-off

Time

Eoff

 

64

 

mJ

 

SC Data

 

Isc

Tp≤10us,VGE=15V, Tvj=150,Vcc=600V,

VCEM≤1200V

 

 

2100

 

 

m

Ÿ Kemasan Ukuran

1200V IGBT Module




Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Kemampuan Sirkuit Pendek Tinggi 10US 1200V IGBT Modul 450A
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