Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
Jenis pembayaran: | L/C,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land |
Pelabuhan: | SHANGHAI |
Model No: YZPST-SKM195GB066D
Merek: Yzpst
Tempat Asal: Cina
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid |
Contoh pada gamba | : | |
Unduh | : |
Jenis Modul Daya IGBT: YZPST-SKM195GB066D
Aplikasi
Inverter untuk drive motor
AC dan DC Servo Drive Amplifier
UPS (catu daya tidak terputus)
Mesin pengelasan switching lunak
Fitur
Low VCE (SAT) dengan Teknologi Stop Lapangan Parit
VCE (SAT) dengan koefisien suhu positif
Termasuk Fast & Soft Recovery Anti-Parallel FWD
Kemampuan Sirkuit Pendek Tinggi (10US)
Struktur modul induktansi rendah
Suhu persimpangan maksimum 175 ℃
Mutlak Maksimum Peringkat
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
650 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
200 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
400 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
695 |
W |
Karakteristik IGBT
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
Internal Gate Resistance | Rgint | 1 | Ω | |||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
Fall Time | tf | VGE = ±15V | 58 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
Fall Time | tf | VGE = ±15V | 102 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A |
Karakteristik dioda
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
STICS CHARCTIC MODUL T C = 25 ° C Kecuali ditentukan lain
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
Kemasan Ukuran
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