YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A

Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A

$3310-99 Piece/Pieces

$25≥100Piece/Pieces

Jenis pembayaran:L/C,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Land
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-SKM195GB066D

MerekYzpst

Tempat AsalCina

VCES650V

IC200A

ICRM400A

VGES±20V

Ptot695W

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Contoh pada gamba :
Unduh :
Modul IGBT SKM195GB066D
Deskripsi Produk

Jenis Modul Daya IGBT: YZPST-SKM195GB066D


Aplikasi

Inverter untuk drive motor

AC dan DC Servo Drive Amplifier

UPS (catu daya tidak terputus)

Mesin pengelasan switching lunak

Fitur

Low VCE (SAT) dengan Teknologi Stop Lapangan Parit

VCE (SAT) dengan koefisien suhu positif

Termasuk Fast & Soft Recovery Anti-Parallel FWD

Kemampuan Sirkuit Pendek Tinggi (10US)

Struktur modul induktansi rendah

Suhu persimpangan maksimum 175 ℃

650V IGBT Power Module 200A



Mutlak Maksimum Peringkat

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V, IC =1mA, Tvj=25

650

V

Continuous Collector Current

IC

Tc=100

200

A

Peak Collector Current

ICRM

tp=1ms

400

A

Gate-Emitter Voltage

VGES

Tvj=25

±20

V

Total Power Dissipation

(IGBT-inverter)

Ptot

Tc=25

Tvjmax=175

695

W

Karakteristik IGBT

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Gate-Emitter Threshold Voltage VGE(th) VGE=VCE,  IC =3.2mA,Tvj=25 5.1 5.8 6.3 V
VCE=650V,VGE=0V, Tvj=25 1 mA
Collector-Emitter Cut-off Current ICES VCE=650V,VGE=0V, Tvj=125 5 mA
Collector-Emitter Ic=200A,VGE=15V, Tvj=25 1.45 1.95 V
Saturation Voltage VCE(sat) Ic=200A,VGE=15V, Tvj=125 1.65 V
Input Capacitance Cies VCE=25V,VGE =0V, 12.3 nF
Reverse Transfer Capacitance Cres f=1MHz, Tvj=25 0.37 nF
Internal Gate Resistance Rgint 1 Ω
Turn-on Delay Time td(on) 48 Ns
Rise Time tr IC =200 A 48 Ns
Turn-off Delay Ttime td(off) VCE =300 V 348 Ns
Fall Time tf VGE = ±15V 58 Ns
Energy Dissipation During Turn-on Time Eon RG = 3.6Ω 2.32 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=25 5.85 mJ
Turn-on Delay Time td(on) 48 Ns
Rise Time tr IC =200 A 48 Ns
Turn-off Delay Time td(off) VCE = 300V 364 Ns
Fall Time tf VGE = ±15V 102 Ns
Energy Dissipation During Turn-on Time Eon RG =3.6Ω 3.08 mJ
Energy Dissipation During Turn-off Time Eoff Tvj=125 7.92 mJ
SC Data Isc Tp≤10us,VGE=15V,Tvj=150 , Vcc=300V,VCEM≤650V 1000 A

Karakteristik dioda

Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Diode DC Forward Current IF Tc=100 200 A
Diode Peak Forward Current IFRM 400 A
IF=200A,Tvj=25 1.55 1.95 V
Forward Voltage VF IF=200A,Tvj=125 1.5 V
Parameter Value Unit
Symbol Conditions Min. Typ. Max.
Recovered Charge Qrr 8.05 uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us 148 A
Reverse Recovery Energy Erec Tvj=25 1.94 mJ
Recovered Charge Qrr 16.9 uC
IF =200 A
VR=300V
Peak Reverse Recovery Current Irr -diF/dt =4200A/us 186 A
Reverse Recovery Energy Erec Tvj=125 3.75 mJ

STICS CHARCTIC MODUL T C = 25 ° C Kecuali ditentukan lain

Parameter Symbol Conditions Value Unit
Min. Typ. Max.
Isolation voltage Visol t=1min,f=50Hz 2500 V
Maximum Junction Temperature Tjmax 150
Operating Junction Temperature Tvj op -40 125
Storage Temperature Tstg -40 125
per IGBT-inverter 0.19 K/W
Junction-to Case R θjc per Diode-inverter 0.31 K/W
Case to Sink R θcs Conductive grease applied 0.085 K/W
Module ElectrodesTorque Mt Recommended(M5) 2.5 5 N · m
Module-to-SinkTorque Ms Recommended(M6) 3 5 N · m
Weight of Module G 150 g

Kemasan Ukuran

YZPST-SKM195GB066D Package Dimensions



Rumah> Produk> Perangkat modul semikonduktor> Modul IGBT> Kemampuan Sirkuit Pendek Tinggi 650V Modul Daya IGBT 200A
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