Daya mosfet smd 110v STC2326
dapatkan harga terbaruJenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-STC2326
Merek: YZPST
B Seri TA30 Triacs
YZPST-STC2326
DESKRIPSI
The STC2326 adalah N-Channel logika perangkat tambahan daya transistor efek medan yang dihasilkan menggunakan teknologi parit DMOS kepadatan super tinggi sel. STC2326 telah dirancang khusus untuk meningkatkan efisiensi keseluruhan konverter DC / DC menggunakan pengendali PWM switching sinkron atau konvensional. Ini telah dioptimalkan untuk muatan gerbang rendah, RDS rendah (ON) dan kecepatan switching cepat.
APLIKASI
Sistem Bertenaga
Konverter DC / DC
Saklar Beban
FITUR
110V / 3A, RDS (ON) = 310mΩ @ VGS = 10V
Desain sel kepadatan tinggi untuk RDS yang sangat rendah (ON)
Ketahanan yang luar biasa dan kemampuan arus DC maksimum
Desain paket SOT-23-6L
PIN KONFIGURASI (SOT-23-6L)
Pin |
Symbol |
Description |
1 |
D |
Drain |
2 |
D |
Drain |
3 |
G |
Gate |
4 |
S |
Source |
5 |
D |
Drain |
6 |
D |
Drain |
O RDER ING DALAM F O R M A T I O N
Part Number |
Package |
Part Marking |
SPN2326S26RGB |
SOT-23-6L |
26YW |
A B SOU L T E MA X I M U M R A T IN G S ( T A = 25 ℃ U n l s s o t h e r w i s e n o t e d)
Parameter |
Symbol |
Typical |
Unit |
|
Drain-Source Voltage |
VDSS |
110 |
V |
|
Gate –Source Voltage |
VGSS |
±20 |
V |
|
Continuous Drain Current(TJ=150℃) |
TA=25℃ |
ID |
3.0 |
A |
TA=70℃ |
2.0 |
|||
Pulsed Drain Current |
IDM |
10 |
A |
|
Power Dissipation |
TA=25℃ |
PD |
2.0 |
W |
TA=70℃ |
1.3 |
|||
Operating Junction Temperature |
TJ |
-55/150 |
℃ |
|
Storage Temperature Range |
TSTG |
-55/150 |
℃ |
|
Thermal Resistance-Junction to Ambient |
RθJA |
62.5 |
℃/W |
Parameter |
Symbol |
Conditions |
Min. |
Typ |
Max. |
Unit |
Static |
||||||
Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS=0V,ID=250uA |
110 |
|
|
V |
Gate Threshold Voltage |
VGS(th) |
VDS=VGS,ID=250uA |
1 |
2.0 |
2.5 |
|
Gate Leakage Current |
IGSS |
VDS=0V,VGS=±20V |
|
|
±100 |
nA |
Zero Gate Voltage Drain Current |
IDSS |
VDS=80V,VGS=0V |
|
|
1 |
uA |
VDS=80V,VGS=0V TJ=125℃ |
|
|
5 |
|||
On-State Drain Current |
ID(on) |
VDS≥5V,VGS =10V |
3.0 |
|
|
A |
Drain-Source On-Resistance |
RDS(on) |
VGS= 10V,ID=3A |
|
0.26 |
0.31 |
Ω |
Forward Transconductance |
gfs |
VDS=10V,ID=3A |
|
2.4 |
|
S |
Diode Forward Voltage |
VSD |
IS=1A,VGS =0V |
|
|
1.2 |
V |
Dynamic |
||||||
Total Gate Charge |
Qg |
VDS=80V,VGS=10V ID= 5A |
|
9 |
13 |
nC |
Gate-Source Charge |
Qgs |
|
2 |
|
||
Gate-Drain Charge |
Qgd |
|
1.4 |
|
||
Input Capacitance |
Ciss |
VDS=25,VGS=0V f=1MHz |
|
508 |
|
pF |
Output Capacitance |
Coss |
|
29 |
|
||
Reverse Transfer Capacitance |
Crss |
|
16.5 |
|
||
Turn-On Time |
td(on) |
VDD=50V,RL=10Ω ID=3A,VGEN=10V RG=3.3Ω |
|
2 |
|
nS |
tr |
|
21.5 |
|
|||
Turn-Off Time |
td(off) |
|
11.2 |
|
||
tf |
|
18.8 |
|
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.