YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Paket plastik semikonduktor> Transistor silikon> BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16
BD139-16 NPN Silicon Transistor komplementer BD140-16

BD139-16 NPN Silicon Transistor komplementer BD140-16

$0.0320000-59999 Piece/Pieces

$0.02≥60000Piece/Pieces

Jenis pembayaran:T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Land
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-BD139-16

MerekYzpst

Tempat AsalCina

VCBO80V

VCEO80V

VEBO5.0V

IC1.5A

IB0.5A

Ptot12.5W

Tj150℃

Tstg-55~150℃

& pengiriman paket
Menjual unit : Piece/Pieces
Unduh :
Transistor BD139-16 TO-126FCU
Deskripsi Produk

NPN Silicon Transistor P/N: YZPST-BD139-16

BD139-16 NPN Silicon Transistor Jenis PNP komplementer adalah BD140-16

KETERANGAN
BD139-16 adalah Silicon Epitaxial Planar NPN Transistors
Dalam paket plastik Jedec to-126, dirancang untuk audio
amplifier dan pengemudi yang menggunakan pelengkap atau semu
Sirkuit Komplemen.

Jenis PNP komplementer adalah BD140-16

YZPST-BD139-16


Peringkat maksimum absolut ( Ta = 25 o c)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.5

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

12.5

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

Karakteristik Listrik (TA = 25 O C)

Parameter Symbol Test   Conditions Min. Typ. Max. Unit
Collector Cut-off Current ICBO VCB  = 80V, IE  = 0 10 μA
Emitter Cut-off Current IEBO
VEB  = 5.0V, IC  = 0 10 μA
VCEO
Collector-Emitter Sustaining Voltage IC  = 1.0mA, IB  = 0 80 V
VCE  = 2.0V, IC  = 0.15A 100 250
DC Current Gain hFE
VCE  = 2.0V, IC  = 0.5A 100
VCE(sat)
Collector-Emitter Saturation Voltage IC  = 0.5A, IB  = 0.05A 0.5 V
VBE
Base-Emitter Voltage IC  = 0.5A, VCE  = 2.0V 1 V
fT
Transition Frequency VCE  = 5V,IC  = 50mA 80 MHz


Rumah> Produk> Paket plastik semikonduktor> Transistor silikon> BD139-16 NPN Silicon Transistor komplementer BD140-16
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