650V 100A Teknologi Teknologi Stop Lapangan IGBT

Name: IGBT YZPST-D100H065AT1S3 TO247
Uploaded: 2023-05-08T03:21:03+08:00
Description: IGBT YZPST-D100H065AT1S3 TO247

$4.5100-999 Piece/Pieces

$3.5≥1000Piece/Pieces

Jenis pembayaran:	L/C,T/T,Paypal
Inkoterm:	FOB,CFR,CIF

Option:

Deskripsi Produk

Atribut Produk

Model No: YZPST-D100H065AT1S3

Tempat Asal: Cina

VCES: 650V

VGES: ±20V

VCEsat, Tvj=25: 1.75V

IC(TC=100℃ ): 100A

ICM: 200A

Tvjmax: 175 ℃

Package: TO247-3L

IC(TC=25℃): 125A

& pengiriman paket

Menjual unit	:	Piece/Pieces
Tipe paket	:	1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Unduh	:

IGBT YZPST-D100H065AT1S3 TO247

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Deskripsi Produk

Parit IGBT Teknologi Stop Lapangan

YZPST-D100H065AT1S3

Fitur

650V, 100a

VCE (SAT) (Typ.) =1.75v@vge=15V, IC = 100a

Suhu persimpangan maksimum 175

Pelapisan timah bebas PB; Rohs patuh

Aplikasi

Konverter surya

Catu daya tanpa gangguan

Konverter pengelasan

Konverter frekuensi switching menengah ke tinggi

Kunci Kinerja dan P ackage Parameter

Order codes	VCE	IC	VCEsat, Tvj=25	Tvjmax	Marking	Package
D100H065AT1S3	650V	100A	1.75V	175 ℃	D100H65AT1	TO247-3L

Maksimum absolut Peringkat

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage	650	V
VGES	Gate-Emitter Voltage	±20	V
IC	Continuous Collector Current (TC=25 ℃ )	125	A
IC	Continuous Collector Current (TC=100 ℃ )	100	A
ICM	Pulsed Collector Current (Note 1)	200	A
	Diode Forward Current (TC=25 ℃ )	125	A
IF	Diode Forward Current (TC=100 ℃ )	100	A
	Maximum Power Dissipation (TC=25 ℃ )	385	W
PD	Maximum Power Dissipation (TC=100 ℃ )	192	W
TJ	Operating Junction Temperature Range	-40 to 175	℃
TSTG	Storage Temperature Range	-55 to 150	℃

Listrik Karakteristik (TC = 25 kecuali dinyatakan lain.)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVCES	Collector-Emitter	VGE=0V, IC=200uA	650			V
BVCES	Breakdown Voltage	VGE=0V, IC=200uA	650	---	---	V
ICES	Collector-Emitter Leakage Current	VCE=650V, VGE=0V			1	mA
ICES	Collector-Emitter Leakage Current	VCE=650V, VGE=0V	---	---	1	mA
	Gate Leakage Current, Forward	VGE=20V, VCE=0V			600	nA
	Gate Leakage Current, Forward	VGE=20V, VCE=0V	---	---	600	nA
IGES	Gate Leakage Current, Reverse	VGE=-20V, VCE=0V			600	nA
	Gate Leakage Current, Reverse	VGE=-20V, VCE=0V	---	---	600	nA
VGE(th)	Gate Threshold Voltage	VGE=VCE , IC=750uA	4.2	---	6	V
VCE(sat)	Collector-Emitter	VGE=15V, IC=100A, Tj=25 ℃	---	1.75	2.2	V
VCE(sat)	Saturation Voltage	VGE=15V, IC=100A, Tj=125 ℃	---	2.05	---	V
td(on)	Turn-on Delay Time		---	35	---	ns
tr	Turn-on Rise Time	VCC=400V	---	155	---	ns
td(off)	Turn-off Delay Time	VGE=±15V	---	188	---	ns
tf	Turn-off Fall Time	IC=100A	---	69	---	ns
Eon	Turn-on Switching Loss	RG=8	---	4.35	---	mJ
Eoff	Turn-off Switching Loss	Inductive Load	---	1.11	---	mJ
Ets	Total Switching Loss	TC=25 ℃	---	5.46	---	mJ
Cies	Input Capacitance	VCE=25V	---	7435	---	pF
Coes	Output Capacitance	VGE=0V	---	237	---	pF
Cres	Reverse Transfer	f =1MHz		128		pF
Cres	Capacitance		---	128	---	pF

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
		IF=100A, Tj=25 ℃	---	1.65	2.2	V
VF	Diode Forward Voltage	IF=100A, Tj=150 ℃	---	1.4	---	V
trr	Diode Reverse Recovery Time			201		ns
		VR=400V	---		---
		IF=100A
Irr	Diode peak Reverse	dIF/dt=200A/us		19		A
Irr	Recovery Current	TC=25 ℃	---	19	---	A
Qrr	Diode Reverse Recovery Charge			2.45		uC
Qrr	Diode Reverse Recovery Charge		---	2.45	---	uC