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| Transportasi: | Ocean,Air |
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Model No: YZPST-N1132NC300
Merek: Yzpst
Jenis Suplai: lain, Produsen asli, ODM, Agen
Bahan Referensi: lain
Konfigurasi: Tunggal
Kerusakan Saat Ini: Tak dapat diterapkan
Penahan Saat Ini (Ih) (maksimum): Tak dapat diterapkan
Status Saat Ini (maksimum): Tak dapat diterapkan
Nomor SCR, Dioda: Tak dapat diterapkan
Suhu Operasional: -40 ° C ~ 125 ° C, -40 ° C ~ 150 ° C
Jenis SCR: Gerbang Sensitif
Struktur: Tunggal, Tak dapat diterapkan
Voltase Menyala: 7 ~ 9V
Pemicu Gerbang Tegangan (Vgt) (maksimum): 2.5V
Output Saat Ini (maksimum): Tak dapat diterapkan
VRRM: 3000
VDRM: 3000
VRSM: 3100
| Menjual unit | : | Others |
| Unduh | : |
|
Produsen Elektronik Power Thyristors 3000V
YZPST-N1132NC300
Fitur Thyristor 3000V: Konfigurasi Gerbang Penguat Interdigitated
. Dijamin waktu mematikan maksimum . Perangkat yang dirakit tekanan. Semua struktur yang tersebar. Kemampuan DV/DT Tinggi
Karakteristik dan peringkat listrik
Pemblokiran - Off State
|
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
3000 |
3000 |
3100 |
V RRM = tegangan balik puncak berulang
V DRM = Puncak Repetitive Off State Voltage
V rsm = tegangan balik puncak non berulang (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 100 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Catatan:
Semua peringkat ditentukan untuk TJ = 25 OC kecuali dinyatakan lain.
(1) Semua peringkat tegangan ditentukan untuk gelombang sinusoidal 50Hz/60ZHz yang diterapkan pada kisaran suhu -40 hingga +125 oC.
(2) 10 msec. Max. Lebar denyut nadi
(3) Nilai maksimum untuk TJ = 125 OC.
(4) Nilai minimum untuk linear dan ombak ucapan eksponensial hingga 80% peringkat VDRM. Gerbang terbuka. TJ = 125 OC.
(5) Nilai non-berulang.
(6) Nilai DI/DT ditetapkan sesuai dengan standar EIA/NIMA RS-397, Bagian 5-2-2-6. Nilai yang didefinisikan adalah tambahan dari yang diperoleh dari sirkuit ubber, terdiri dari kapasitor 0,2 F dan 20 ohmsistance secara paralel dengan thristor yang diuji.
Melakukan - di negara bagian
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
1132 |
|
A |
Sinewave,180o conduction,Tc=55oC |
|
RMS value of on-state current |
ITRMS |
|
2228 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
14.3 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
1.02x106 |
|
A2s |
8.3 msec |
|
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.08 |
|
V |
ITM = 1830 A |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
400 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
|
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
|
Peak gate current |
IGM |
|
- |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 |
|
mA |
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Gate voltage required to trigger all units
|
VGT |
|
3.0 |
|
V
|
VD = 10 V;IT=3A;Tj = +25 oC
|
|
Peak negative voltage |
VRGM |
|
5 |
|
V |
|
Dinamis
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Delay time |
tgd |
|
1.0 |
- |
ms |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
|
Turn-on time |
tgt |
|
2.0 |
- |
|
|
|
Turn-off time (with VR = -5 V) |
tq |
- |
- |
400 |
ms |
ITM=1000A, tp=1000us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
|
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
Karakteristik dan peringkat termal dan mekanis
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/kW |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
|
Thermal resistance - junction to case |
RQ (j-s) |
|
24 48 |
|
K/kW |
Double sided cooled Single sided cooled |
|
Mounting force |
F |
19 |
26 |
- |
kN |
|
|
Weight |
W |
|
|
- |
Kg |
about |
* Pemasangan permukaan halus, rata dan diminyaki
Catatan: Untuk garis besar dan dimensi case, lihat gambar garis besar kasus di halaman 3 dari data teknis ini
Tel: 86-514-87782298
Whatsapp: +8613805278321
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