YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat disk semikonduktor (tipe kapsul)> Tahap Kontrol Thyristor> Kontrol Fase Thyristor Daya Tinggi
Kontrol Fase Thyristor Daya Tinggi
Kontrol Fase Thyristor Daya Tinggi
Kontrol Fase Thyristor Daya Tinggi
Kontrol Fase Thyristor Daya Tinggi
Kontrol Fase Thyristor Daya Tinggi

Kontrol Fase Thyristor Daya Tinggi

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Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-KP738LT

MerekYZPST

& pengiriman paket
Tipe paket : 1. Kemasan anti-elektrostatik 2. Kotak karton 3. Kemasan pelindung plastik
Unduh :
Deskripsi Produk

Kontrol Fase Thyristor Daya Tinggi

PST-KP 738LT

KP738LT thyristor


Fitur: . Semua Struktur Tersebar . Konfigurasi Gerbang Penguat Linier . Kemampuan pemblokiran hingga 22 00 volt

. Dijamin Maksimal Turn-Off Time . Kemampuan dV / dt tinggi . Perangkat Tekanan Rakitan


Melakukan - pada negara

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

  3200


A

Sinewave,180o conduction,Ths=85oC

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

45000


41500

 

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

8.5x106

 

A2s

10.0 msec

Latching current

IL

 

     400

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     100

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


     1.30


V

ITM = 2000 A; Duty cpstcle £ 0.01%

Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt


      150


A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt


      100


A/ms

Switching from VDRM£ 1000 V


KARAKTERISTIK LISTRIK DAN PERINGKAT

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W


Peak gate current

IGM

 

15

 

A


Gate current required to trigger all units

IGT

 

300

200

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units



VGT

 

 

0.30

5

4


 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM


15


V



Dinamis

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

    3.0

2.5

ms

ITM = 50 A; VD = 1500 V

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

     400


250

ms

ITM > 2000 A; di/dt = 10 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery current

Irr

 

      200


A

ITM > 2000 A; di/dt = 10 A/ms;

VR³ -50 V


KARAKTERISTIK DAN PERINGKAT TERMAL DAN MEKANIK

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

 

oC


Thermal resistance - junction to case

RQ (j-c)


0.012


 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.002


 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

 8000

 35.5

10000

44.4

 

lb.

kN


Weight

W



  3.5

1.60

Lb.

Kg.


* Permukaan pemasangan halus, rata dan berlemak

Catatan: untuk kerangka kasus dan dimensi, lihat gambar kerangka kasus di halaman 3 dari Data Teknis ini


GARIS BESAR DAN DIMENSI

High Power Thyristor Phase Control PST-KP738LT

 High power thyristor phase control
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