Tegangan tinggi thyristor scr tipe 6500V scr thyristor

Tegangan tinggi thyristor scr tipe 6500V scr thyristor

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Deskripsi Produk

Atribut Produk

& pengiriman paket

Deskripsi Produk

Atribut Produk

Model No: YZPST-DCR1020SF65

Merek: YZPST

& pengiriman paket

Tipe paket	:	1. Kemasan anti-elektrostatik 2. Kotak karton 3. Kemasan pelindung plastik
Unduh	:

Deskripsi Produk

Thyristor Daya Tinggi

YZPST-DCR1020SF65

Semua peringkat ditentukan untuk Tj = 25 oC kecuali dinyatakan lain.

(1) Semua peringkat tegangan ditentukan untuk gelombang sinusoidal 50Hz / 60zHz yang diterapkan pada rentang suhu -40 hingga +125 oC.

(2) 10 msec. maks. lebar pulsa

(3) Nilai maksimum untuk Tj = 125 oC.

(4) Nilai minimum untuk bentuk gelombang linear dan eksponensial hingga 80% dengan nilai VDRM. Gerbang terbuka. Tj = 125 oC.

(5) Nilai tidak berulang.

(6) Nilai di / dt ditetapkan sesuai dengan Standar EIA / NIMA RS-397, Bagian 5-2-2-6. Nilai yang ditentukan akan ditambahkan

Untuk yang diperoleh dari rangkaian snubber, terdiri dari kapasitor 0,2 F dan resistensi 20 ohm secara paralel dengan thristor yang diuji.

Fitur:. Semua Struktur Tersebar . Konfigurasi Gerbang Amplifikasi Tengah . Kemampuan memblokir hingga 4200 volt

. Dijamin Maksimal Turn-Off Time . Kemampuan dV / dt tinggi . Perangkat Tekanan Rakitan

High Power Thyristor

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	IT(AV)		640		A	Sinewave,180o conduction,T =60oC c
RMS value of on-state current	ITRMS		1005		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	ITSM		- 8.5		KA KA	8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC
I square t	I2t		0.36x106		A2s	8.3 msec and 10.0 msec
Latching current	IL		600		mA	VD = 24 V; RL= 12 ohms
Holding current	IH		200		mA	VD = 24 V; I = 2.5 A
Peak on-state voltage	VTM		3.6		V	ITM = 1800 A; Duty cPSTCle 0.01%; T = 25 oC j
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ s	Switching from VDRM 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		100		A/ s	Switching from VDRM 1000 V

E L E CTR I C A L CH A R A C T E R IS T I C S A N D R A T I N G S

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		150		W	tp = 40 us
Average gate power dissipation	PG(AV)		5		W
Peak gate current	IGM		-		A
Gate current required to trigger all units	IGT		- 300 -		mA mA mA	V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j
Gate voltage required to trigger all units	V		- 3.0 -		V V V	V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j
Peak negative voltage	VGRM		5		V

G a t i n g

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		150		W	tp = 40 us
Average gate power dissipation	PG(AV)		5		W
Peak gate current	IGM		-		A
Gate current required to trigger all units	IGT		- 300 -		mA mA mA	V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = +25 oC D L j V = 6 V;R = 3 ohms;T = +125oC D L j
Gate voltage required to trigger all units	V		- 3.0 -		V V V	V = 6 V;R = 3 ohms;T = -40 oC D L j V = 6 V;R = 3 ohms;T = 0-125oC D L j VD = Rated VDRM; RL = 1000 ohms; T = + 125 oC j
Peak negative voltage	VGRM		5		V

D y n a m i c

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

0.5

ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 s; tp = 20 s

Turn-off time (with VR = -50 V)

600

ITM = 1000 A; di/dt = 25 A/ s;

VR -50 V; Re-applied dV/dt = 20

V/ s linear to 80% VDRM; VG = 0;

T = 125 oC; Duty cPSTCle

0.01%

Reverse recovery charge

Qrr

ITM = 1000 A; di/dt = 25 A/ s; VR -50 V

* F o r gu a r a n t eed m a x . v a lu e , c on t a c t f a c t o r y .

T H E R M A L A N D ME CH A N I C A L CH A R A C T E R IS T I C S A N D R A T I N G S

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	Tj	-40	+125		oC
Storage temperature	Tstg	-40	+125		oC
Thermal resistance - junction to case	R (j-c)		0.022 0.052		o C/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R (c-s)		0.004 0.008		o C/W	Double sided cooled * Single sided cooled *
Thermal resistamce - junction to sink	R (j-s)		- -		o C/W	Double sided cooled * Single sided cooled *
Mounting force	P	18	22		kN
Weight	W			-	g