Peringkat Surge tinggi daya tinggi penyearah cepat dioda

VRRM (1)

VRSM (1)

4500

4500

Repetitive peak reverse leakage

I_RRM

20 mA

150 mA 

Parameter

Symbol

Min

Max.

Typ

Units

Conditions

Max. Average value of on-state current

I_F(AV)M

2639

A

Sinewave,180^oconduction,T_c=55^oC

RMS value of on-state current

I_FRMS

4922

A

Nominal value

Peak one cycle surge

(non repetitive) current

I_FSM

27.5

kA

T_j=150°C, V_R=0,8V_RRM, t_p=10ms

I square t

I²t

3.79x10³

kA²s

10 msec

Peak on-state voltage

V_FM

2.25

V

I_FM =3000 A; Tj = 150 ^oC

Threshold  voltage

V_FO

1.38

Tj = 150 ^oC

Forward slope resistance

r_F

0.29

mΩ

Tj = 150 ^oC

Reverse Recovery Current (4)

I_RM(REC)

-

280

A

I_FM = 1000 A; dI_F/dt = 60 A/ms,

Tj = 150 ^oC

Reverse Recovery Charge (4)

Q_rr

-

2300

mC

Reverse Recovery Time (4)

t_RR

-

8.5

ms

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+150

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_Q (j-c)

0.011

^K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to sink

R_Q (c-s)

0,.022

^K/W

Double sided cooled

Single sided cooled

Mounting force

P

37

47

-

kN

Weight

W

1700

g

About

Sym

A

B

C

D

H

mm

109

73

98

3.5×3

36±1