Tingkat DV/DT Tinggi 800V BTA24-800BW 25A TRIAC
$0.242000-19999 Piece/Pieces
$0.19≥20000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land,Others |
Pelabuhan: | SHANGHAI |
$0.242000-19999 Piece/Pieces
$0.19≥20000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land,Others |
Pelabuhan: | SHANGHAI |
Model No: YZPST-BTA24-800BW
Merek: Yzpst
Tempat Asal: Cina
IT(RMS): 25A
VDRM/: 800V
VRRM: 800V
VTM: ≤1.5A
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 250A
I2t: 340A2s
DI/dt: 50A/ μs
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid |
Unduh | : |
BTA24/BTB24 Series 25A TRIACS
Tingkat DV/DT Tinggi 800V BTA24-800BW 25A TRIAC
Dengan kinerja pergantian yang tinggi, 3 produk kuadran terutama direkomendasikan untuk digunakan pada beban induktif. Dari ketiga terminal ke heatsink eksternal, BTA24 menyediakan tegangan isolasi terukur 2500 VRM yang memenuhi standar UL
UTAMA FITUR:
symbol |
value |
unit |
IT(RMS) |
25 |
A |
VDRM/VRRM |
600/800/1200/1600 |
V |
VTM |
≤1.5 |
V |
MUTLAK MAKSIMUM Peringkat:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800/1200/1600 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800/1200/1600 |
V |
RMS on-state current |
IT(RMS) |
25 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
250 |
A |
I2t value for fusing (tp=10ms) |
I2t |
340 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
10 |
W |
Karakteristik Listrik (TJ = 25 ℃ Kecuali ditentukan lain)
3 kuadran :
Parameter | Value | |||||
Test Condition | Quadrant | CW | BW | Unit | ||
IGT | VD=12V, | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 80 | mA | |
Ⅰ-Ⅲ | 70 | 90 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 80 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 1000 | 1500 | V/ µs |
4 kuadran :
Parameter | Value | |||||
Test Condition | Quadrant | C | B | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 75 | mA | |
Ⅰ-Ⅲ- Ⅳ | 70 | 80 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 90 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 200 | 500 | V/ µs |
PANAS Resistensi
Symbol | Test Condition | Value | Unit | |
TO-220A(Ins) | 1.5 | |||
TO-220F(Ins) | 1.6 | |||
TO-263 | 2.1 | ℃/W | ||
Rth(j-c) | junction to case(AC) | TO-3P | 0.68 |
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