$2.15100-999 Piece/Pieces
$1.85≥1000Piece/Pieces
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| Transportasi: | Ocean,Air |
| Pelabuhan: | SHANGHAI |
Model No: YZPST-FM3N150C
Merek: Yzpst
Tempat Asal: Cina
Vdss: 1500V
ID Continuous (Tc = 25 °C ): 1.8A
ID Continuous ( Tc = 100 °C ): 1.2A
Idm: 12A
Vgss: ±30V
EAS: 225mJ
Dv/dt: 5V/ns
| Menjual unit | : | Piece/Pieces |
| Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Kemasan Pelindung Plastik |
| Unduh | : |
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MOSFET N-CHANNEL 1500V
YZPST-FM3N150C
Gambaran umum
Power MOSFET ini diproduksi menggunakan teknologi planar self-aligned canggih. Teknologi canggih ini telah dirancang khusus untuk meminimalkan resistensi negara, memberikan kinerja switching yang unggul, dan menahan pulsa energi tinggi dalam mode longsoran dan pergantian.
Perangkat ini dapat digunakan dalam berbagai sirkuit switching daya untuk miniaturisasi sistem dan efisiensi yang lebih tinggi.
Fitur
3a, 1500v, RDS (ON) Typ. = 5q@vgs = 10 v ld = 1.5a
Biaya gerbang rendah (khas9.3NC)
Biaya gerbang rendah (tipikal2.4pf)
Switching cepat
100% Avalanche Diuji
Peringkat maksimum absolut TC = 25 ° C kecuali dinyatakan lain
| Symbol | Parameter | JFFM3N150C | Units | |
| Vdss | Drain - Source Voltage | 1500 | V | |
| Id | Drain Current | Continuous (Tc = 25 °C ) | 1.8 | A |
| Continuous ( Tc = 100 °C ) | 1.2 | A | ||
| Idm | Drain Current - Pulsed ( Note 1) | 12 | A | |
| Vgss | Gate - Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy ( Note 2 ) | 225 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt ( Note 3 ) | 5 | V/ns | |
| Pd | Power Dissipation (Tc = 25 °C ) | 30 | W | |
| Tj,Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| Tl | Maximum lead temperature for soldering purposes | 300 | °C | |
| 1/8 frome case for 5 seconds | ||||
Karakteristik termal
| Symbol | Parameter | JFFM3N150C | Units |
| Raic | Thermal Resistance, Junction-to-Case | 4.1 | °C/W |
| Rqja | Thermal Resistance, Junction-to-Ambient | 62.5 | °c/w |
Karakteristik Listrik TC = 25 ° C Kecuali dinyatakan lain
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Off Characteristics | ||||||
| BVdss | Drain - Source Breakdown Voltage | Vgs = 0 V, Id =250 uA | 1500 | V | ||
| / BVdss/ | Breakdown Voltage Temperature Coefficient | Id = 250 uA, Referenced to | -- | 1.3 | -- | v/°c |
| Tj | 25 °C | |||||
| Zero Gate Voltage Drain Current | Vds = 1500 V, Vgs = 0 V | 25 | uA | |||
| Idss | Vds = 1200 V, Tc = 125 °C | -- | -- | 500 | uA | |
| Igssf | Gate-Body Leakage Current, Forward | Vgs = 30 V, Vgs = 0 V | — | — | 100 | nA |
| Igssr | Gate-Body Leakage Current, Reverse | Vgs = -30 V, Vgs = 0 V | — | — | -100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | Vds = Vgs, Id = 250 uA | 3 | — | 5 | V |
| RDS(on) | Static Drain-Source on-Resista nee | Vgs = 10 V, Id= 1.5A | — | 5 | 8 | Q |
| gFS | Forward Transconductance | Vds = 30 V, Id= 1.5 A ( Note | -- | 4.5 | -- | S |
| 4) | ||||||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | Vds = 25 V, Vgs = 0 V, f = | — | 1938 | — | pF |
| Coss | Output Capacitance | 1.0 MHz | — | 104 | — | pF |
| Crss | Reverse Transfer Capacitance | — | 2.4 | — | pF | |
| Rg | Gate resistance | F= 1.0 MHz | 3.5 | Q | ||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | 34 | ns | |||
| tr | Turn-On Rise Time | Vds = 750 V, Id=3.0A/ Rg = | 17 | ns | ||
| td(off) | Turn-Off Delay Time | 100 , Vgs = 10 V (Note 4,5) | 56 | ns | ||
| tf | Turn-Off Fall Time | 27 | ns | |||
| Qe | Total Gate Charge | Vds = 750 V, Id =3.0 A Vgs = | 9.3 | nC | ||
| Qgs | Gate-Source Charge | 10 V (Note 4,5) | 15 | nC | ||
| Qgd | Gate-Drain Charge | 5.3 | nC | |||
| Drain - Source Diode Characteristics and Maximum Ratings | ||||||
| Is | Maximum Continuous Drain-Source Diode Forward Current | 3 | A | |||
| Ism | Maximum Pulsed Drain-Source Diode Forward Current | 12 | A | |||
| Vsd | Drain-Source Diode Forward Voltage | Vgs = 0 V, Is = 3.0 A | 1.5 | V | ||
| trr | Reverse Recovery Time | Vgs = 0 V, Is = 3.0 A | 302 | ns | ||
| Qrr | Reverse Recovery Charge | dlF/dt = 100 A/us ( Note | -- | 10 | -- | uC |
| 4) | ||||||
Catatan:
1. Peringkat berulang: Lebar berdenyut dibatasi oleh suhu persimpangan maksimum
2. l = lo.omh, IAS = 6.7a, rg = 25q, starttj = 25 ° C
3. ISD <3.0A Z DI/DT <LOOA/US, VDD <BVDSS, Mulai TJ = 25 ° C
4. Tes berdenyut: Lebar berdenyut <3oous z siklus tugas < 2%
5. Pada dasarnya tidak tergantung pada suhu operasi
Tel: 86-514-87782298
Whatsapp: +8613805278321
Alamat: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
Situs web: https://id.yzpst.com
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