1200V n-channel silikon karbida daya mosfet sic mosfet
$10100-999 Piece/Pieces
$6.5≥1000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
$10100-999 Piece/Pieces
$6.5≥1000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-M2G0080120D
Merek: Yzpst
VDSmax: 1200V
Id: 42A
Pd: 208W
VGS,op: -5/+20V
VGSmax: -10/+25V
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan anti-elektrostatik 2. Kotak karton 3. Kemasan pelindung plastik |
Unduh | : |
M2G0080120D
1200V n-channel silikon karbida daya mosfet sic mosfet
Fitur
• Paket yang dioptimalkan dengan pin sumber driver terpisah
• Tegangan pemblokiran tinggi dengan resistansi rendah
• Switching berkecepatan tinggi dengan kapasitansi rendah
• Dioda intrinsik cepat dengan pemulihan terbalik rendah (QRR)
• Mudah untuk paralel
• Rohs patuh
Manfaat
• Efisiensi sistem yang lebih tinggi
• Mengurangi persyaratan pendinginan
• Peningkatan kepadatan daya
• Memungkinkan frekuensi yang lebih tinggi
• Meminimalkan dering gerbang
• Pengurangan kompleksitas dan biaya sistem
Aplikasi
• Switch Mode Power Supplies
• Konverter DC/DC
• Inverter surya
• Pengisi daya baterai
• Drive motor
Peringkat maksimum (TC = 25 ° C kecuali ditentukan lain)
Symbol | Parameter | Value | Unit | Test Conditions | Note |
f^DSmax | Drain-Source Breakdown Voltage | 1200 | V | 海=0 V, /d=100 卩A | |
Id | Continuous Drain Current | 42 | A | 4s=20 V Tc=25 °C | Fig. 18 |
Pd | Power Dissipation | 208 | W | *=25 °C | Fig. 19 |
FgS,op | Recommend Gate Source Voltage | -0.25 | V | ||
J^Smax | Maximum Gate Source Voltage | -0.4 | V | AC (f>lHz) | Note 1 |
Tj, Tstg | Operating Junction and Storage Temperature Range | -55 to | °C | ||
175 | |||||
7l | Soldering Temperature | 260 | °C |
Karakteristik listrik
Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
Static | |||||||
BVds | Drain-Source Breakdown Voltage | 1200 | - | - | V | 4s=0 V, Zd=100 卩A | |
A)ss | Zero Gate Voltage Drain Current | — | 11 | 100 | 丹s=1200 V Pgs=0 V | ||
Igss | Gate-Source Leakage | — | 10 | 250 | nA | 4s=20 V | |
FGS(th) | Gate-Source Threshold Voltage | 2 | — | 4 | V | Id=5 mA, | Fig. 11 |
&DS(on) | Drain-Source On-Resistance | — | 78 | 100 | mQ | 国=20 V, Zd=20 A | Fig. 6 |
Dynamic | |||||||
Ciss | Input Capacitance | — | 1128 | PF | 4s=0 V,比s=1000 V | Fig. 17 | |
C^oss | Output Capacitance | — | 86 | f^l.OMHz,瓜=25 mV | |||
Crss | Reverse Transfer Capacitance | — | 5 | ||||
Eoss | Coss Stored Energy | - | 44 | 卩J | Fig. 16 | ||
Qs | Total Gate Charge | — | 52 | nC | moo V | Fig. 12 | |
figs | Gate-Source Charge | - | 17 | 血=20 A | |||
Qgd | Gate-Drain Charge | - | 15 | Fgs=-5/+20 V | |||
td(cn) | Turn-on Delay Time | — | 41 | ns | 丹 s=800 V | ||
tr | Turn-on Rise Time | - | 21 | Fgs=-5/+20 V | |||
Turn-off Delay Time | — | 48 | Id=20A | ||||
tf | Turn-off Fall Time | — | 16 | Ro(ext)=2.5 Q | |||
RG(int) | Internal Gate Resistance | - | 4 | n | E.O MHz, Vac=25 mV |
Skema sirkuit uji
Sic mosfet
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