Mengunci arus 600V hingga 252 8a triac
$0.115000-19999 Piece/Pieces
$0.09≥20000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land,Express,Others |
Pelabuhan: | SHANGHAI |
$0.115000-19999 Piece/Pieces
$0.09≥20000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land,Express,Others |
Pelabuhan: | SHANGHAI |
Model No: YZPST-BT137-600D
Merek: Yzpst
Place Of Origin: China
IT(RMS): 8A
VDRM/VRRM: 600/800V
VTM: ≤1.6V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 65A
I2t: 21A2s
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid |
Unduh | : |
BT137 Series 8A TRIACS
KETERANGAN
Dengan arus penahan dan kait yang rendah, BT137
Seri Triacs sangat disarankan untuk
digunakan pada beban daya tipe resistansi menengah dan kecil
.
UTAMA FITUR:
symbol |
value |
unit |
IT(RMS) |
8 |
A |
VDRM/VRRM |
600/800 |
V |
VTM |
≤1.6 |
V |
MUTLAK MAKSIMUM Peringkat:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800 |
V |
RMS on-state current |
IT(RMS) |
8 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
65 |
A |
I2t value for fusing (tp=10ms) |
I2t |
21 |
A2s |
Critical rate of rise of on-state current (IG=2 × IGT) | Ⅰ- Ⅱ-Ⅲ | 50 | ||
dI/dt | Ⅳ | 10 | A/ μs | |
Peak gate current | IGM | 2 | A | |
Average gate power dissipation | PG(AV) | 0.5 | W | |
Peak gate power | PGM | 5 | W |
Karakteristik Listrik (TJ = 25 ℃ Kecuali ditentukan lain)
Parameter | Value | |||||||
Test Condition | Quadrant | D | E | F | G | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 5 | 10 | 25 | 50 | ||||
IGT | Ⅳ | 10 | 25 | 70 | 100 | mA | ||
VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MAX | 1.3 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | |||
IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA | |
Ⅰ-Ⅲ-Ⅳ | 10 | 30 | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 20 | 40 | 70 | 100 | mA |
VD=0.66×VDRM Tj=125℃ Gate open | ||||||||
dV/dt | MIN | 20 | 50 | 100 | 200 | V/ µs |
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