12A 800V BT138-800E TRIAC TO-220C dengan arus penahan dan kait yang rendah
$0.13600-19999 Piece/Pieces
$0.1≥20000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land,Air |
Pelabuhan: | SHANGHAI |
$0.13600-19999 Piece/Pieces
$0.1≥20000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-BT138-800E
Merek: Yzpst
Place Of Origin: China
IT(RMS): 12A
VDRM/VRRM: 600/800V
VTM: ≤1.6V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 120A
I2t: 45A2s
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid |
Contoh pada gamba | : | |
Unduh | : |
Seri BT138 12a triacs
YZPST-BT138-800E
KETERANGAN
Dengan arus penahan dan kait yang rendah, BT138
Serial triacs sangat direkomendasikan untuk
Gunakan daya tipe resistansi menengah dan kecil
memuat.
UTAMA FITUR:
symbol |
value |
unit |
IT(RMS) |
12 |
A |
VDRM/VRRM |
600/800 |
V |
VTM |
≤1.6 |
V |
MUTLAK MAKSIMUM Peringkat:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800 |
V |
RMS on-state current |
IT(RMS) |
12 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
120 |
A |
I2t value for fusing (tp=10ms) |
I2t |
45 |
A2s |
Critical rate of rise of on-state current (IG=2 × IGT) | Ⅰ- Ⅱ-Ⅲ | 50 | ||
dI/dt | Ⅳ | 10 | A/ μs | |
Peak gate current | IGM | 2 | A | |
Average gate power dissipation | PG(AV) | 0.5 | W | |
Peak gate power | PGM | 5 | W |
Karakteristik Listrik (TJ = 25 ℃ Kecuali ditentukan lain)
3 kuadran :
Parameter | Value | ||||||
Test Condition | Quadrant | SW | CW | BW | Unit | ||
IGT | 10 | 35 | 50 | mA | |||
VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | ||
VGD | VD=VDRM Tj=125℃ | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | ||
IH | IT=100mA | MAX | 10 | 40 | 60 | mA | |
Ⅰ-Ⅲ | 30 | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 40 | 60 | 80 | mA |
VD=2/3VDRM Tj=125℃ | |||||||
dV/dt | Gate open | MIN | 200 | 500 | 1000 | V/ µs |
4 kuadran :
Parameter | Value | |||||||
Test Condition | Quadrant | D | E | F | G | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 5 | 10 | 25 | 50 | ||||
IGT | Ⅳ | 10 | 25 | 70 | 100 | mA | ||
VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MAX | 1.3 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | |||
IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA |
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