60mA Thyristor Asymmetric VRRM 30V
$601-99 Piece/Pieces
$48≥100Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Min. Memesan: | 1 Piece/Pieces |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
$601-99 Piece/Pieces
$48≥100Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Min. Memesan: | 1 Piece/Pieces |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-A1237NC280
Merek: YZPST
Thyristor Asimetris
YZPST-A1237NC280
Perusahaan Asymmetric Thyristor 25V telah lulus sertifikasi sistem mutu ISO9001 dan kualitasnya dijamin. Cocok untuk kebutuhan SCR Anda.
Blocking - Off State
VDRM (1) |
VDSM (1) |
VRRM (1) |
VRSM(1) |
2800 |
2800 |
30 |
30 |
V DRM = Puncak tegangan kondisi mati berulang
V RSM = Tegangan balik puncak non-berulang
Catatan:
Semua peringkat ditentukan untuk Tj = 25 o C kecuali
dinyatakan lain.
(1) Semua peringkat tegangan ditentukan untuk diterapkan
50Hz / 60zHz bentuk gelombang sinusoidal di atas
kisaran suhu -40 hingga +125 o C.
(2) 10 msec. maks. lebar pulsa
(3) Nilai maksimum untuk Tj = 125 o C.
(4) Nilai minimum untuk linier dan eksponensial
waveshape hingga 80% berperingkat V DRM . Gerbang terbuka.
Tj = 125 o C.
(5) Nilai tidak berulang.
(6) Nilai di / dt ditetapkan sesuai
dengan EIA / NIMA Standard RS-397, Bagian
5-2-2-6. Nilai yang ditentukan akan ditambahkan
Untuk itu diperoleh dari sirkuit snubber,
terdiri dari kapasitor 0,2 mF dan 20 ohm
perlawanan paralel dengan thristor di bawah
uji.
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
10 mA 60 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
3000 V/msec |
Melakukan - pada negara
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
1237 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
ITRMSM |
|
2555 |
|
A |
Nominal value |
Peak one cycle surge (non repetitive) current |
ITSM |
|
-
18 |
|
KA
KA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.62x103 |
|
KA2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
- |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
1000 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.1 |
|
V |
ITM = 2000 A; Duty Cycle £ 0.01%; Tj =125 oC |
Threshold vlotage |
VT0 |
|
1.7 |
|
V |
|
Slope resistance |
rT |
|
0.21 |
|
mΩ |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
2000 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
1000 |
|
A/ms |
Switching from VDRM £ 1000 V |
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
30 |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
10 |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
- 400 - |
|
mA mA mA |
VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = +25 oC VD = 10 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
|
- 3.0 -
|
|
V V V |
VD = 10 V;RL = 3 ohms;Tj = -40 oC VD = 10 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VRGM |
|
10 |
|
V |
|
Dinamis
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
- |
1 |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
- |
20 |
ms |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cycle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
- |
- |
mC |
ITM = 1000 A; di/dt = 25 A/ms; VR ³ -50 V |
KARAKTERISTIK DAN PERINGKAT TERMAL DAN MEKANIK
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
K/KW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to heatsink |
RQ (c-s) |
|
- - |
|
K/KW |
Double sided cooled * Single sided cooled * |
Thermal resistamce - junction to heatsink |
RQ (j-s) |
|
24 48 |
|
K/KW |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
19 |
26 |
|
kN |
|
Weight |
W |
|
|
510 |
g |
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