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Inkoterm:	FOB,CFR,CIF
Transportasi:	Ocean,Air
Pelabuhan:	Shanghai

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Deskripsi Produk

Atribut Produk

Deskripsi Produk

Atribut Produk

Model No: YZPST-KN1000A28-BSTR62186

Merek: YZPST

Deskripsi Produk

Asymmetric thyristor

YZPST-KN1000A28-BSTR62186

KARAKTERISTIK LISTRIK DAN PERINGKAT

Asymmetric thyristor Type: KN1000A28-BSTR62186

Catatan:

Semua peringkat ditentukan untuk Tj = 25 oC kecuali

jika tidak dinyatakan.

(1) Semua peringkat tegangan ditentukan untuk diterapkan

50Hz / 60zHz bentuk gelombang sinusoidal atas

kisaran suhu -40 hingga +125 oC.

(2) 10 msec. maks. lebar pulsa

(3) Nilai maksimum untuk Tj = 125 oC.

(4) Nilai minimum untuk linier dan eksponensial

waveshape hingga 80% dinilai VDRM. Gerbang terbuka.

Tj = 125 oC.

(5) Nilai non-repetitif.

(6) Nilai di / dt ditetapkan sesuai

dengan EIA / NIMA Standard RS-397, Bagian

5-2-2-6. Nilai yang ditentukan akan ditambahkan

tion ke yang diperoleh dari sirkuit snubber,

terdiri dari 0,2 F kapasitor dan 20 ohm

resistensi secara paralel dengan thristor di bawah

uji.

Pemblokiran - Off State

VRRM (1)	VDRM (1)
20	2800

V _RRM = Tegangan balik puncak berulang

V _DRM = Puncak tegangan status off berulang

Repetitive peak reverse leakage and off state leakage

I_{RRM
/}I_DRM

100 mA

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Melakukan - pada negara

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)M		1000		A	Sinewave,180^o conduction,T_sink=55^oC
RMS value of on-state current	I_TRMS		2200		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		20		KA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		2x10⁶		A²s	10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		2.42		V	I_TM =2000 A; T_j = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		-		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		700		A/ms	Switching from V_DRM £ 1000 V

KARAKTERISTIK LISTRIK DAN PERINGKAT

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 300 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dinamis

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.6	0.8	ms	I_TM =500 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	55	ms	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		-	-	mC	I_TM =1000 A; di/dt =25 A/ms; V_R ³ -50 V

* Untuk jaminan maks. nilai, hubungi pabrik.

KARAKTERISTIK THERMAL DAN MEKANIK DAN PERINGKAT

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		- -		K/W	Double sided cooled Single sided cooled
Thermal resistance - case to heatsink	R_Q_(c-s)		- -		K/W	Double sided cooled Single sided cooled
Thermal resistance - junction to heatsink	R_Q_(j-s)		0.02 0.04		K/W	Double sided cooled Single sided cooled
Mounting force	P	19	26		kN
Weight	W			-	g	about