YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Paket plastik semikonduktor> Transistor silikon> Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor
Silicon PNP Darlington Power Transistor

Silicon PNP Darlington Power Transistor

$0.72100-499 Piece/Pieces

$0.55≥500Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:Shanghai
Atribut Produk

Model NoYZPST-FW26025A

MerekYzpst

TypeIntrinsic Semiconductor

ApplicationRadio

Batch Number2010+

VCBO-100V

VCEO-100V

VEBO-5V

IC-20A

Icm-40A

IB-0.5A

PC160W

TJ200℃

Tstg-65~200℃

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Kemasan Pelindung Plastik
Unduh :
FW26025A 私 域 .MP4
FW26025A 私域 截取 视频 1-15 秒 2.21MB
Deskripsi Produk

Silicon PNP Darlington Power Transistor

YZPST-FW26025A

Silicon PNP Darlington Power Transistor

KETERANGAN

· Keuntungan saat ini DC tinggi-

: hfe = 5000 (min)@ ic = -2a

· Tegangan penopang pengumpul-pengumpul-

: VCEO (SUS) = -100V (min)

· Variasi lot-to-lot minimum untuk kinerja perangkat yang kuat dan operasi yang andal.

APLIKASI

· Dirancang untuk peralatan industri linier dan switching

Peringkat maksimum absolut (TA = 25 ℃)

SYMBOL

 

PARAMETER

 

VALUE

 

UNIT

 

VCBO

 

Collector-Base Voltage

 

-100

 

V

 

VCEO

 

Collector-Emitter Voltage

 

-100

 

V

 

VEBO

 

Emitter-Base Voltage

 

-5

 

V

 

IC

 

Collector Current-Continuous

 

-20

 

A

 

ICM

 

Collector Current-Peak

 

-40

 

A

 

IB

 

Base Current- Continuous

 

-0.5

 

A

 

PC

Collector Power Dissipation

@TC=25

 

160

 

W

 

Tj

 

Junction Temperature

 

200

 

Tstg

 

Storage Temperature Range

 

-65~200

Karakteristik termal

SYMBOL

 

PARAMETER

 

MAX

 

UNIT

 

Rth j-c

 

Thermal Resistance, Junction to Case

 

1.09

/W

KARAKTERISTIK LISTRIK

Tc = 25 ℃ kecuali ditentukan lain

 

SYMBOL

 

PARAMETER

 

CONDITIONS

 

MIN

 

TYP.

 

MAX

 

UNIT

 

VCEO(SUS)*

 

Collector-Emitter Sustaining Voltage

 

IC= -100mA, IB= 0

 

-100

 

 

 

V

 

VCE(sat)-1*

 

Collector-Emitter Saturation Voltage

 

IC= -10A ,IB= -40mA

 

 

 

-2.0

 

V

 

VCE(sat)-2*

 

Collector-Emitter Saturation Voltage

 

IC= -20A ,IB= -200mA

 

 

 

-3.0

 

V

 

VBE(sat)*

 

Base-Emitter Saturation Voltage

 

IC= -20A ,IB= -200mA

 

 

 

-4

 

V

 

V BE(on)*

 

Base-Emitter On Voltage

 

IC= -10A ; VCE= -3V

 

 

 

-2.8

 

V

 

ICEO

 

Collector Cutoff current

 

VCE= -50V, IB= 0

 

 

 

-1

 

mA

 

ICEV

 

Collector Cutoff current(VBE=-1.5V)

VCE= -100V, IB= 0

 

 

-0.5

 

mA

VCE= -100V, IB= 0,Tc=150

-5

 

IEBO

 

Emitter Cutoff Current

 

VEB= -5V; IC= 0

 

 

 

-2

 

mA

 

hFE-1*

 

DC Current Gain

 

IC= -2A ; VCE= -3V

 

5000

 

 

 

 

hFE-2*

 

DC Current Gain

 

IC= -10A ; VCE= -3V

 

750

 

 

18000

 

 

hFE-3*

 

DC Current Gain

 

IC= -30A ; VCE= -3V

 

200

 

 


*: Tes pulsa: Lebar pulsa = 300US, siklus tugas ≤2%

Silicon PNP Darlington Power Transistor




Rumah> Produk> Paket plastik semikonduktor> Transistor silikon> Silicon PNP Darlington Power Transistor
苏ICP备05018286号-1
Kirim permintaan
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Kirim