85A Pemantik rokok elektronik, Mosfet Load 85N03
$0.299≥1000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Min. Memesan: | 1000 Piece/Pieces |
Transportasi: | Ocean,Air |
Pelabuhan: | Shanghai |
$0.299≥1000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Min. Memesan: | 1000 Piece/Pieces |
Transportasi: | Ocean,Air |
Pelabuhan: | Shanghai |
Model No: YZPST-85N03
Merek: YZPST
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan anti-elektrostatik 2. Kotak karton 3. Kemasan pelindung plastik |
Pemantik rokok elektronik MOSFET
YZPST-85N03
85A Pemantik rokok elektronik, Mosfet, Saklar beban, MOSFET, 85N03
VDSS30V RDS(ON) 2.3mΩ(max.)@ VGS=10V RDS(ON) 3.0mΩ(max.)@ VGS=4.5V ID 85A |
|
Description |
DFN5X6-8L |
YZPST85N03 uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
|
Applications |
Features |
■ Lithium-Ion Secondary Batteries ■ Load Switch ■ DC-DC converters and Off-line UPS |
■ Low On-Resistance ■ Low Input Capacitance ■ Low Miller Charge ■ Low Input / Output Leakage |
Absolute Maximum Ratings (TA=25°C unless otherwise noted) |
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
30V |
V |
Gate-Source Voltage |
VGSS |
±20V |
V |
Drain Current-Continuous @ TC=25℃ NOTE 3 |
ID |
85 |
A |
Drain Current-Continuous @ TC=100℃ NOTE 3 |
68 |
A |
|
Drain Current-Pulsed NOTE 1 |
IDM |
320 |
A |
Avalanche Current, L=0.1mH |
IAS |
50 |
A |
Avalanche Energy, L=0.1mH |
EAS |
125 |
mJ |
Maximum Power Dissipation @ TC=25℃ |
PD |
60 |
W |
Maximum Power Dissipation @ TA=25℃ |
5.7 |
W |
|
Storage Temperature Range |
TSTG |
-50 to 150°C |
°C |
Operating Junction Temperature Range |
TJ |
-50 to 150°C |
°C |
Thermal Resistance Ratings |
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Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
Maximum Junction-to-Ambient NOTE2 |
RθJA |
Steady State |
- |
- |
22 |
°C/W |
Maximum Junction-to-Case |
RθJC |
Steady State |
- |
- |
2.1 |
°C/W |
Electrical Characteristics(TJ=25°C unless otherwise noted) |
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Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
OFF CHARACTERISTICS |
||||||
Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V , IDS=250uA |
30 |
- |
- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=30V, VGS=0V |
- |
- |
1 |
uA |
Gate-Source Leakage Current |
IGSS |
VGS=±20V , VDS=0V |
- |
- |
±100 |
nA |
ON CHARACTERISTICS |
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Gate Threshold Voltage |
VGS(TH) |
VGS=VDS, IDS=250uA |
1.2 |
- |
2.5 |
V |
Drain-Source On-Resistance |
RDS(ON) |
VGS=10V , IDS=16A |
- |
1.75 |
2.3 |
mΩ |
VGS=4.5V , IDS=16A |
- |
2.6 |
3.0 |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
Ciss |
VDS=10V, VGS=0V, f=1MHz |
- |
5910 |
- |
pF |
Output Capacitance |
Coss |
- |
725 |
- |
||
Reverse Transfer Capacitance |
Crss |
- |
537 |
- |
||
SWITCHING CHARACTERISTICS |
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Turn-On Delay Time |
Td(on) |
VDS=15V, VGS=10V, ID=1A , RGEM=3.3Ω |
- |
20 |
- |
ns |
Rise Time |
tr |
- |
6.5 |
- |
||
Turn-Off Delay Time |
Td(off) |
- |
122 |
- |
||
Fall Time |
tf |
- |
15 |
- |
||
Total Gate Charge at 4.5V |
Qg |
VDS=15V, IDS=16A, VGS=10V |
- |
54 |
- |
nC |
Gate to Source Gate Charge |
Qgs |
- |
18 |
- |
||
Gate to Drain "Miller" Charge |
Qgd |
- |
20.5 |
- |
||
SWITCHING CHARACTERISTICS |
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Drain-Source Diode Forward Voltage |
VSD |
VGS=0V, IS=4A |
- |
- |
1.3 |
V |
Body Diode Reverse Recovery Time |
trr |
If=10A, dl/dt=100A/μs, TJ=25°C |
- |
46 |
- |
ns |
Body Diode Reverse Recovery Charge |
Qrr |
- |
38 |
- |
nC |
Catatan:
1. Uji Pulsa: Lebar Pulsa ≦ 300μs, Duty Cycle ≦ 2%.
2. RΘJA adalah jumlah dari hambatan termal junction-ke-kasus dan kasus-ke-sekitar di mana referensi termal kasing didefinisikan sebagai permukaan pemasangan solder pin penahan. RΘJC dijamin oleh desain sementara RΘCA ditentukan oleh desain papan pengguna. RΘJA ditunjukkan di bawah ini untuk operasi perangkat tunggal pada FR-4 in
masih udara.
3. Peringkat maksimum saat ini dibatasi oleh paket.
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