2800V thyristor daya tinggi untuk konverter daya

2800V thyristor daya tinggi untuk konverter daya

$1551-199 Bag/Bags

$105≥200Bag/Bags

Jenis pembayaran:	L/C,T/T,Paypal
Inkoterm:	FOB,CFR,CIF
Min. Memesan:	1 Bag/Bags
Transportasi:	Ocean,Air
Pelabuhan:	SHANGHAI

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Deskripsi Produk

Atribut Produk

Deskripsi Produk

Atribut Produk

Model No: YZPST-5STP24L2800

Merek: YZPST

Deskripsi Produk

Kontrol Fase Thyristor Daya Tinggi

YZPST-5STP24L2800

THYRISTOR DAYA TINGGI UNTUK FITUR DAN APLIKASI KONTROL FASE

Fitur:

. Semua Struktur Tersebar

. Konfigurasi Gerbang Penguat Interdigitated

. Dijamin Maksimal Turn-Off Time

. Kemampuan dV / dt tinggi

. Perangkat Rakitan Tekanan

YZPST-5STP24L2800-1

Melakukan - pada negara

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	IT(AV)M		2400		A	Sinewave,180o conduction,T =85oC c
RMS value of on-state current	ITRMSM		4120		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	ITSM		46 43		kA kA	8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC
I square t	I2t		8.7x106		A2s	8.3 msec
Latching current	IL		200		mA	VD = 24 V; RL= 12 ohms
Holding current	IH		75		mA	VD = 24 V; I = 2.5 A
Peak on-state voltage	VTM		1.35		V	I = 3000 A; T = 125 oC TM j
Threshold vlotage	VT0		0.85		V
Slope resistance	rT		0.16		mΩ
Critical rate of rise of on-state current (5, 6)	di/dt		300		A/ s	Switching from VDRM 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		150		A/ s	Switching from VDRM 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		-		W
Average gate power dissipation	PG(AV)		-		W
Peak gate current	IGM		-		A
Gate current required to trigger all units	IGT		400		mA	V = 10 V;I =3A;T = +25 oC D T j
Gate voltage required to trigger all units	VGT		2.6		V	V = 10 V;I =3A;T = +25 oC D T j
Peak negative voltage	VRGM		-		V

Dinamis

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	tgd		3	-	s	VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C
Turn-on time	tgt		-	-
Turn-off time (with VR = -5 V)	tq	-	-	400	s	ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us
Reverse recovery current	Irm		-		A	ITM=4000A, tp=2000us, di/dt=60A/us

KARAKTERISTIK DAN PERINGKAT TERMAL DAN MEKANIK

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	Tj	-40	+125		oC
Storage temperature	Tstg	-40	+140		oC
Thermal resistance - junction to case	R (j-c)		10 20		K/kW	Double sided cooled * Single sided cooled *
Thermal resistamce - case to sink	R (c-s)		2 4		K/kW	Double sided cooled * Single sided cooled *
Thermal resistance - junction to case	R (j-s)		- -		K/kW	Double sided cooled * Single sided cooled *
Mounting force	F	45	60	50	kN
Weight	W			0.9	Kg	about

* Permukaan pemasangan halus, rata dan berlemak

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