YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat modul semikonduktor> Modul thyristor.> Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor

Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor

$10.560-999 Piece/Pieces

$6.5≥1000Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Land,Others
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-SK70KQ12

MerekYzpst

Tempat AsalCina

VRRM1200V

VDRM1200V

VRSM1300V

VDSM1300V

IRRM5mA

IDRM5mA

IT(AV)55A

IT(RMS)80A

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Unduh :
Modul Thyristor SK70KQ12
Deskripsi Produk

YZPST-SK70KQ12


70a 1200 Modul Thyristor

FITUR PRODUK
Desain kompak
Satu pemasangan sekrup
Perpindahan panas dan isolasi melalui DBC
Chip thyristor pasif
Arus kebocoran rendah

APLIKASI
Permulaan yang lembut
Pengatur suhu
Kontrol cahaya
YZPST-SK70KQ12



MUTLAK MAKSIMUM Peringkat (TC = 25 ° C kecuali ditentukan lain)

Symbol Parameter Test Conditions Values Unit
VRRM Maximum Repetitive Reverse Voltage Tvj=125 1200 V
VDRM Maximum repetitive peak off-state voltage
VRSM Non-Repetitive Reverse Voltage Tvj=125 V
VDSM Non-repetitive peak off-state voltage 1300
IRRM Maximum Repetitive Reverse Current Tvj=125 5 mA
IDRM Maximum repetitive peak off-state Current
IT(AV) Mean On-state Current TC=85 55
IT(RMS) RMS Current TC=85, sin180 80 A
ITSM Non Repetitive Surge Peak On-state Current 10ms, Tj=25 1100
I2t For Fusing 10ms, Tj=25 6050 A2S
VTM Peak on-state voltage ITM=150A 1.7 V
dv/dt critical rate of rise of off-state voltage VD=2/3VDRM   Gate Open Tj=125 1000 V/us
IGT gate trigger current     max. 80 mA
VGT gate trigger voltage     max. 1.5 V
IH gate trigger current 200 mA
IL latching current 500 mA
Viso AC   50Hz    RMS    1min 2500 V
TJ Junction Temperature -40 to +125
TSTG Storage Temperature Range -40 to +125
RthJC Junction to Case Thermal Resistance(Per thyristor chip ) 0.7  /W
Torque mounting force, Module to Sink 2.5 Nm
Tsolder Teminals,10s 260

Garis besar

Outlines


Rumah> Produk> Perangkat modul semikonduktor> Modul thyristor.> Satu sekrup pemasangan arus kebocoran rendah 70A 1200V Modul Thyristor
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