YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Paket plastik semikonduktor> Penyearah Terkendali Silikon (SCR)> Tingkat DV/DT Tinggi X0605 6A SCR
Tingkat DV/DT Tinggi X0605 6A SCR
Tingkat DV/DT Tinggi X0605 6A SCR
Tingkat DV/DT Tinggi X0605 6A SCR
Tingkat DV/DT Tinggi X0605 6A SCR
Tingkat DV/DT Tinggi X0605 6A SCR
Tingkat DV/DT Tinggi X0605 6A SCR

Tingkat DV/DT Tinggi X0605 6A SCR

$0.0610000-39999 Piece/Pieces

$0.05≥40000Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CIF
Transportasi:Ocean,Land,Express
Pelabuhan:SHAGHAI
Atribut Produk

Model NoYZPST-X0605

MerekYzpst

Tempat AsalCina

IT(RMS)6A

IGT≤10mA

VDRM/VRRM600/800V

Tstg-40~150℃

Tj-40~110℃

VDRM600/800V

VRRM600/800V

ITSM45A

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Unduh :
SCR X0605 TO252
Deskripsi Produk

YZPST-X0605 6 a Scrs

KETERANGAN:
Seri SCR X0605 memberikan tingkat DV/DT tinggi dengan
resistensi yang kuat terhadap antarmuka elektromagnetik. Mereka
terutama disarankan untuk digunakan pada rambut lurus,
igniter dll

X0605


UTAMA FITUR:

symbol

value

unit

IT(RMS)

6

A

IGT

≤10

mA

VDRM/VRRM

600/800

V

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40~150

Operating junction temperature range

Tj

-40~110

Repetitive peak off-state voltage (Tj=25)

VDRM

600/800

V

Repetitive peak reverse voltage (Tj=25)

VRRM

600/800

V

RMS on-state current

IT(RMS)

6

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

ITSM

45

A

I2t value for fusing (tp=10ms)

I2t

6.75

A2s

Critical rate of rise of on-state current (IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

1.8

A

Average gate power dissipation

PG(AV)

0.3

W

Peak gate power

PGM

3

W

KARAKTERISTIK LISTRIK (TJ = 25 ℃ Kecuali ditentukan lain)

Symbol Value
Test Condition MIN TYPE MAX Unit
IGT - 5 10 mA
VGT VD=12V, RL=33Ω - 0.6 0.8 V
VD=VDRM Tj=110
VGD RL=3.3kΩ 0.2 - - V
IH IT=50mA - - 5 mA
IL IG=1.2IGT - - 6 mA
dV/dt VD=0.66×VDRM   Tj=110 Gate open RGK=1KΩ V/ µs
10 - -

Karakteristik statis

Symbol Test Condition Value Unit
VTM ITM=8A   tp=380μs Tj=25 MAX 1.5 V
IDRM VDRM= VRRM Tj=25 5 µA
IRRM RGK=1KΩ Tj=110 MAX 100 µA

PANAS Resistensi

Symbol Test Condition Value Unit
TO-202-3 7.8
TO-252-4R 6.5
junction to case(AC) TO-126 7.3 /W
Rth(j-c) TO-220B 3

KEMASAN MEKANIS DATA

PACKAGE MECHANICAL DATA

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