YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Paket plastik semikonduktor> Penyearah Terkendali Silikon (SCR)> NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t
NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t
NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t
NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t
NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t
NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t

NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-MJE2955T

MerekYzpst

VCBO-70V

VCEO-60V

VEBO-5V

IC-10A

PTOT75W

Tj150℃

Tstg-55-150℃

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Kemasan Pelindung Plastik
Unduh :
YZPST-MJE2955T NPN Silicon Power Transistor MJE29
Deskripsi Produk


PNP Silicon Power Transistor MJE2955T

Desrcription:
MJE2955T adalah transistor PNP, yang saling melengkapi dengan MJE3055T dan digunakan dalam amplifikasi daya audio dan sirkuit konversi daya.

Formulir Paket: To-220

TO220 Silicon Power Transistors MJE2955T

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-10

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150




Karakteristik listrik (TC = 25 ° C, kecuali sebaliknya ditentukan)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

VCBO

Collector-Base Breakdown Voltage

IC= -10mA

-70

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= -200mA

-60

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IE= -10mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB= -70V

 

 

1

mA

IEBO

Emitter Cutoff Current

VEB= -5V

 

 

5

mA

hFE

DC Current Gain

IC= -4A,VCE= -4V

20

 

100

 

VCE(sat)

Collector-Base Breakdown Voltage

IC= -4A,IB= -0.4A

 

 

-1.1

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A,IB= -4A

 

 

-1.8

V

fT

Transition Frequency

VCE=10V, IC=0.5A f=1MHZ

2

 

 

MHZ

aPulse Testtp ≤300usδ≤2%

Paket mekanik DATA

MJE2955T Complementary to MJE3055T TO220


Rumah> Produk> Paket plastik semikonduktor> Penyearah Terkendali Silikon (SCR)> NPN Silicon Power Transistor MJE2955T Komplementer untuk Mje3055t
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