YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Paket plastik semikonduktor> Penyearah Terkendali Silikon (SCR)> TO220 NPN Tipe Transistor 2SC2073
TO220 NPN Tipe Transistor 2SC2073
TO220 NPN Tipe Transistor 2SC2073
TO220 NPN Tipe Transistor 2SC2073
TO220 NPN Tipe Transistor 2SC2073
TO220 NPN Tipe Transistor 2SC2073

TO220 NPN Tipe Transistor 2SC2073

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-2SC2073

MerekYzpst

VCBO150V

VCEO150V

VEBO5V

IC1.5A

PTOT75W

Tj150℃

Tstg-55-+150℃

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Kemasan Pelindung Plastik
Unduh :
YZPST-2SC2073 TO220 NPN Tipe Transistor 2SC2073
Deskripsi Produk

Transistor Jenis NPN 2SC2073

Desrcription:
2SC2073 adalah transistor tipe NPN, digunakan sebagai tabung sakelar daya untuk ballast elektronik dan lampu hemat energi elektronik. Ini memiliki karakteristik kehilangan switching rendah, keandalan tinggi, karakteristik suhu tinggi yang baik, kecepatan switching yang sesuai, kebocoran terbalik rendah, dll.
NPN Type Transistor

Peringkat Max I Mum Absolute

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

5

V

IC

Continuous Collector Current

1.5

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150

Karakteristik listrik (TC = 25 ° C, kecuali ditentukan lain)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

V(BR)CBO

Collector-Base Breakdown Voltage

IC=1mA

150

 

 

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=0.1mA

150

 

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=1mA

-5

 

 

V

ICBO

Collector Cutoff Current

VCB=150V, IE=0

 

 

5

μA

ICEO

Collector Cutoff Current

VCE=150V, IC=0

 

 

5

μA

IEBO

Emitter Cutoff Current

VEB=5V, IC=0

 

 

5

μA

hFE

DC Current Gain

VCE=10V, IC=0.5A

40

 

140

 

VCE(sat)

Collector-Base Breakdown Voltage

IC=0.5A, IB=50mA

 

 

0.85

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=0.5A, IB=50mA

 

 

1.5

V

a: tp300μs,δ≤2%

Paket Data Mekanik

NPN Type Transistor


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