NPN Silicon Power Transistor 13005D
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
$0.122000-9999 Piece/Pieces
$0.08≥10000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-13005D
Merek: Yzpst
VCBO: 700V
VCEO: 400V
VEBO: 9V
IC: 3A
Icm: 6A
PTOT: 75W
Tj: 150℃
Tstg: -55—150℃
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Kemasan Pelindung Plastik |
Unduh | : |
NPN Silicon Power Transistor 13005D
● Desrcription:
13005D adalah transistor NPN yang digunakan dalam ballast elektronik dan lamp hemat energi elektronik. Ini memiliki karakteristik kehilangan switching rendah, keandalan tinggi, karakteristik suhu tinggi yang baik, kecepatan switching yang sesuai, tegangan kerusakan tinggi dan kebocoran terbalik rendah.
● Peringkat Max I Mum Absolute
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
700 |
V |
|
VCEO |
Collector-Emitter Voltage |
400 |
V |
|
VEBO |
Emitter-Base Voltage |
9 |
V |
|
IC |
Continuous Collector Current |
3 |
A |
|
Icm |
Collector Pulse Current(Tp<5ms) |
6 |
A |
|
PTOT |
Total dissipation at Tcase=25 ℃ |
TO-126SD |
50 |
W |
TO-220 |
75 |
|||
Tj |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55—150 |
℃ |
Symbol |
Parameter |
Test Condition |
Value |
Unit |
||
Min |
Type |
Max |
||||
ICBO |
Collector Cutoff Current |
VCB= 700 V,IE=0 |
|
|
0.1 |
mA |
ICEO |
Base Cutoff Current |
VCE= 400 V,Ic=0 |
|
|
0.1 |
mA |
IEBO |
Emitter Cutoff Current |
VEB= 9 V,IC=0 |
|
|
0.1 |
mA |
VCBO |
Collector-Base Breakdown Voltage |
IC= 0.1mA |
700 |
|
|
V |
VCEO |
Collector-Emitter Breakdown Voltage |
IC= 0.1mA |
400 |
|
|
V |
VEBO |
Emitter-Base Breakdown Voltage |
IB= 0.1mA |
9 |
|
|
V |
hFE |
DC Current Gain |
IC= 0.5A,VCE= 5V |
15 |
|
35 |
|
a VCE sat |
Collector-Base Breakdown Voltage |
IC= 2A,IB= 0.5A |
|
|
1 |
V |
a VBE sat |
Base-Emitter Saturation Voltage |
IC= 2A,IB= 0.5A |
|
|
1.5 |
V |
ts |
Storage Time |
UI9600,Ic=0.5A |
2 |
|
7 |
us |
fT |
Transition Frequency |
VCE=10V,IC=0.2A F=1MHz |
5 |
|
|
MHz |
a:Pulse Test,tp ≤300us,δ≤2% |
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