YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Paket plastik semikonduktor> Penyearah Terkendali Silikon (SCR)> NPN Silicon Power Transistor 13005D
NPN Silicon Power Transistor 13005D
NPN Silicon Power Transistor 13005D
NPN Silicon Power Transistor 13005D
NPN Silicon Power Transistor 13005D
NPN Silicon Power Transistor 13005D

NPN Silicon Power Transistor 13005D

$0.122000-9999 Piece/Pieces

$0.08≥10000Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:SHANGHAI
Atribut Produk

Model NoYZPST-13005D

MerekYzpst

VCBO700V

VCEO400V

VEBO9V

IC3A

Icm6A

PTOT75W

Tj150℃

Tstg-55—150℃

& pengiriman paket
Menjual unit : Piece/Pieces
Tipe paket : 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Kemasan Pelindung Plastik
Unduh :
NPN Silicon Power Transistor YZPST-13005D
Deskripsi Produk

NPN Silicon Power Transistor 13005D
● Desrcription:
13005D adalah transistor NPN yang digunakan dalam ballast elektronik dan lamp hemat energi elektronik. Ini memiliki karakteristik kehilangan switching rendah, keandalan tinggi, karakteristik suhu tinggi yang baik, kecepatan switching yang sesuai, tegangan kerusakan tinggi dan kebocoran terbalik rendah.

Silicon Power Transistors

● Peringkat Max I Mum Absolute

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

9

V

IC

Continuous Collector Current

3

A

Icm

Collector Pulse CurrentTp5ms

6

A

PTOT

 

Total dissipation at Tcase=25 ℃

TO-126SD

50

W

TO-220

75

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55150

● Karakteristik listrik (TC = 25 ° C, kecuali ditentukan lain)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

ICBO

Collector Cutoff Current

VCB= 700 VIE=0

 

 

0.1

mA

ICEO

Base Cutoff Current

VCE= 400 VIc=0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 9 VIC=0

 

 

0.1

mA

VCBO

Collector-Base Breakdown Voltage

IC= 0.1mA

700

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= 0.1mA

400

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IB= 0.1mA

9

 

 

V

hFE

DC Current Gain

IC= 0.5A,VCE= 5V

15

 

35

 

a

VCE sat

Collector-Base Breakdown Voltage

IC= 2A,IB= 0.5A

 

 

1

V

a

VBE sat

Base-Emitter Saturation Voltage

IC= 2A,IB= 0.5A

 

 

1.5

V

ts

Storage Time

UI9600Ic=0.5A

2

 

7

us

fT

Transition Frequency

VCE=10VIC=0.2A F=1MHz

5

 

 

MHz

aPulse Testtp 300usδ≤2%

● Data mekanik paket

Silicon Power TransistorsNPN Silicon Power Transistors

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