Paket Mountable Permukaan 100-8 1A SCR

$0.0261000-9999 Piece/Pieces

$0.019≥10000Piece/Pieces

Deskripsi Produk

Atribut Produk

Model No: YZPST-100-8

Merek: Yzpst

Aplikasi: Tak dapat diterapkan

Jenis Suplai: Produsen asli, ODM, Agen, Pengecer

Bahan Referensi: lembaran data, Foto, Model EDA / CAD

Jenis Paket: Permukaan gunung

Metode Instalasi: Tak dapat diterapkan

Fungsi FET: Tak dapat diterapkan

Konfigurasi: Tak dapat diterapkan

Tstg: -40 ~150°C

Tj: -40 ~125°C

VDRM: 900V

VRRM: 900V

IT(RMS): 1.0A

ITSM: 12A

I2t: 0.72A2S

& pengiriman paket

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Deskripsi Produk

ABSOLUTE MAXIMUM RATINGS
Parameter	Symbol	Value	Unit
Storage junction temperature range	Tstg	-40 ~ 150	℃
Operating junction temperature range	Tj	-40~ 125	℃
repetitive surge peak Off-state voltage	VDRM	900	V
repetitive peak reverse voltage	VRRM	900	V
RMS on-state current	IT(RMS)	1.0	A
Non repetitive surge peak on-state current ( 180° conduction angle, F=50Hz,t=10ms/60Hz,8 3ms)	ITSM	12	A
I2t value for fusing (tp= 10ms)	I2t	0.72	A2S
Critical rate of rise of on-state current (I =2×IGT, tr ≤ 100 ns)	di/dt	50	A/μS
Peak gate current	IGM	0.5	A
Average gate power dissipation	PG(AV)	0.1	W
Maximum device temperature for solderingPurposes (for 10 seconds maximum)	TL	260	℃
ESD level	HBM	Class 3 (4000-16000V)
Humidity sensitive level	MSL	Three-level (30℃,60%RH,168h)

ELECTRICAL CHARACTERISTICS (T=25℃unless otherwise specified)
Symbol	Test Condition	Value			Unit
Symbol	Test Condition	MlV	TYP	MAX	Unit
IGT	V = 12V R = 140Ω	20	40	120	4A
VGT	V = 12V R = 140Ω	-	-	1 0	V
VGD	VD=VDRM Tj=125℃ R= 1KΩ	0.2	-	-	V
IL	IG= 1.2IGT	-	-	6	mA
IH	IT=50mA	-	-	5	mA
dV/dt	VD=2/3VDRM Gate Open Tj=125℃	50	-	-	V/ μs