Modul Dioda Thyristor MFC200 1600V Tinggi

Modul Dioda Thyristor MFC200 1600V Tinggi

Name: Modul Dioda Thyristor MFC200-16
Uploaded: 2023-05-30T09:09:02+08:00
Description: Modul Dioda Thyristor MFC200-16

$2550-999 Piece/Pieces

$18≥1000Piece/Pieces

Jenis pembayaran:	L/C,T/T,Paypal
Inkoterm:	FOB,CFR,CIF
Transportasi:	Ocean,Land
Pelabuhan:	SHANGHAI

Option:

VRRM:1600V
VDRM:1600V
VRSM:1700V
IRRM, IDRM:70 mA
dv/dt:1000 V/µs
ITAV, IFAV:216A

Hubungi sekarang

Deskripsi Produk

Atribut Produk

Model No: YZPST-MFC200-16

Merek: Yzpst

Tempat Asal: Cina

VRRM: 1600V

VDRM: 1600V

VRSM: 1700V

IRRM, IDRM: 70 mA

Dv/dt: 1000 V/µs

ITAV, IFAV: 216A

ITRMS, IFRMS: 340A

ITSM, IFSM: 6.8kA

& pengiriman paket

Menjual unit	:	Piece/Pieces
Tipe paket	:	1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid
Contoh pada gamba	:
Unduh	:

Modul Dioda Thyristor MFC200-16

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Deskripsi Produk

YZPST-MFC200-16
Modul thyristor / dioda
Fitur:
- Perpindahan panas melalui aluminium-nitride keramik terisolasi baseplate logam
- Sambungan solder keras untuk keandalan tinggi
- Thyristor dengan gerbang penguat
Aplikasi Khas:
- Kontrol motor DC - starter lunak motor AC
- Pengatur suhu
- peredupan cahaya profesional

Pemblokiran Terbalik - Luar Negara

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
YZPST MFC200	1600 V	1600 V	1700 V

Vrrm = tegangan balik puncak berulang

Vdrm = tegangan off-state puncak berulang

VRSM = tegangan balik puncak non berulang (2)

Repetitive reverse and off-state peak leakage current	IRRM, IDRM	70 mA (3)
Critical rate of rise of off-state voltage	dv/dt	1000 V/µs (4)

Melakukan

Parameter	Symbol	Min	Max	Typ	Unit		Conditions
Average on-state / forward current	ITAV, IFAV		216			A	50 Hz sine wave,180o conduction,
							Tc = 85 °C
RMS on-state / forward current	ITRMS, IFRMS		340			A	50 Hz sine wave,180° conduction,
							Tc = 85 °C
Surge non repetitive current	ITSM, IFSM		6.8			kA	50 Hz sine wave
							Half cycle
I squared t	I2 t		231			kA2s	VR = 0
							Tj = Tjmax
Peak on-state / forward voltage	VTM, VFM		1.1			V	On-state current 200 A, Tj = Tjmax
Threshold voltage	VT(TO)		0.8			V	Tj = Tjmax
On-state slope resistance	rT		1.4			mΩ	Tj = Tjmax
Holding current	IH			150		mA	Tj = 25 °C
Latching current	IL			200		mA	Tj = 25 °C
Critical rate of rise of on-state current	di/dt		500			A/µs	IG = 5 IGT, tr= 1 µs, Tj = Tjmax, non rep.
RMS isolation voltage	VINS		3000			V	AC 50 Hz, 60 s