Tingkat DV/DT Tinggi BTA26-600BW TO-3PA 600V TRIAC
$0.71000-4999 Piece/Pieces
$0.55≥5000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Others |
Pelabuhan: | SHANGHAI |
$0.71000-4999 Piece/Pieces
$0.55≥5000Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Others |
Pelabuhan: | SHANGHAI |
Model No: YZPST-BTA26-600BW
Merek: Yzpst
Tempat Asal: Cina
IT(RMS): 26A
VDRM: 600V
VRRM: 600V
VTM: ≤1.5V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 260A
I2t: 350A2s
Menjual unit | : | Piece/Pieces |
Tipe paket | : | 1. Kemasan Anti-Elektrostatik 2. Kotak Karton 3. Braid |
Unduh | : |
BTA26/BTB26Series 26A TRIACS
Tingkat DV/DT Tinggi BTA26-600BW TO-3PA 600V TRIAC
KETERANGAN:Dengan kemampuan tinggi untuk menahan pemuatan guncangan arus besar, triac seri BTA26/BTB26 memberikan laju DV/DT yang tinggi dengan resistensi yang kuat terhadap antarmuka elektromagnetik. Dengan kinerja pergantian yang tinggi, 3 produk kuadran terutama direkomendasikan untuk digunakan pada beban induktif. Dari ketiga terminal ke heatsink eksternal, BTA26 memberikan tegangan isolasi terukur 2500 VRM yang memenuhi standar UL
Kemampuan Tinggi 3 Kuadran BTA26-600B TO-3PA TRIAC
FITUR UTAMA:
symbol |
value |
unit |
IT(RMS) |
26 |
A |
VDRM/VRRM |
600/800/1200/1600 |
V |
VTM |
≤1.5 |
V |
Peringkat maksimum absolut:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800/1200/1600 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800/1200/1600 |
V |
RMS on-state current |
IT(RMS) |
26 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
260 |
A |
I2t value for fusing (tp=10ms) |
I2t |
350 |
A2s |
Critical rate of rise of on-state current(IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
10 |
W |
Karakteristik Listrik (TJ = 25 ℃ Kecuali ditentukan lain)
3 kuadran :
Parameter | Value | |||||
Test Condition | Quadrant | CW | BW | Unit | ||
IGT | VD=12V, | 35 | 50 | mA | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 80 | mA | |
Ⅰ-Ⅲ | 70 | 90 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 80 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 1000 | 1500 | V/ µs |
4 kuadran :
Parameter | Value | |||||
Test Condition | Quadrant | C | B | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 25 | 50 | mA | |||
IGT | VD=12V, | Ⅳ | 50 | 70 | mA | |
VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 60 | 75 | mA | |
Ⅰ-Ⅲ- Ⅳ | 70 | 80 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 90 | 100 | mA |
VD=2/3VDRM Tj=125℃ Gate open | ||||||
dV/dt | MIN | 200 | 500 | V/ µs |
Karakteristik statis
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=35A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | Tj=25℃ | 10 | µA | ||
IRRM | VDRM= VRRM | Tj= 125℃ | MAX | 3 | mA |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.