Efisiensi sistem yang lebih tinggi n-channel sic MOSFET TO247-4L
$3650-499 Piece/Pieces
$32≥500Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land |
Pelabuhan: | SHANGHAI |
$3650-499 Piece/Pieces
$32≥500Piece/Pieces
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Land |
Pelabuhan: | SHANGHAI |
Model No: YZPST-M2A016120L
Merek: Yzpst
Tempat Asal: Cina
VDSmax: 1200V
VGSmax: -8/+22V
VGSop: -4/+18V
ID Tc=25℃: 115A
ID Tc=100℃: 76A
ID(pulse): 250A
PD: 582W
TJ, TSTG: -55 to +175℃
N-channel sic power mosfet p/n: yzpst-m2a016120l sic mosfet
Fitur
Tegangan pemblokiran tinggi dengan resistansi rendah
Switching kecepatan tinggi dengan kapasitansi rendah
Mudah untuk disejajarkan dan mudah dikendarai
Manfaat
Efisiensi sistem yang lebih tinggi
Berkurangnya persyaratan pendinginan
Peningkatan kepadatan daya
Peningkatan frekuensi switching sistem
Aplikasi
Energi terbarukan
EV Battery Chargers
Konverter DC/DC tegangan tinggi
Switch Mode Power Supplies
Kemasan
Part Number |
Package |
M2A016120L |
TO-247-4 |
Peringkat maksimum (t c = 25 ℃ tidak kurang ditentukan)
Symbol | Parameter | Value | Unit | Test Conditions | Note |
VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | |
VGSmax | Gate-Source Voltage | -8/+22 | V | Absolute maximum values | |
VGSop | Gate-Source Voltage |
-4/+18 |
V | Recommended operational values | |
ID | Continuous Drain Current | 115 | A | VGS=18V, Tc=25℃ | |
76 | VGS=18V, Tc=100℃ | ||||
ID(pulse) | Pulsed Drain Current | 250 | A | Pulse width tp limited by TJmax | |
PD | Power Dissipation | 582 | W | Tc=25℃, TJ=175℃ | |
TJ, TSTG | Operating Junction and Storage Temperature | -55 to +175 | ℃ |
Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | |
VGS(th) | Gate Threshold Voltage | 1.9 | 2.6 | 4 | V | VDS=VGS, ID=23mA | |
/ | 1.8 | / | VDS=VGS, ID=23mA, TJ=175℃ | ||||
IDSS | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | VDS=1200V, VGS=0V | |
IGSS+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=22V | |
IGSS- | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=-8V | |
RDS(on) | Drain-Source On-State Resistance | / | 16 | 21 | mΩ | VGS=18V, ID=75A | |
/ | 28 | / | VGS=18V, ID=75A, TJ=175℃ | ||||
gfs | Transconductance | / | 40.5 | / | S | VDS=20V, ID=75A | |
/ | 37 | / | VDS=20V, ID=75A, TJ=175℃ | ||||
Ciss | Input Capacitance | / | 4300 | / | VGS=0V | ||
Coss | Output Capacitance | / | 236 | / | pF | VDS=1000V | |
Crss | Reverse Transfer Capacitance | / | 35 | / | f=1MHz | ||
Eoss | Coss Stored Energy | / | 136 | / | µJ | VAC=25mV | |
EON | Turn-On Switching Energy | / | 2.1 | / | µJ | VDS=800V, VGS=-4V/18V | |
EOFF | Turn-Off Switching Energy | / | 1.6 | / | ID=40A, RG(ext)=2.5Ω, L=100μH | ||
td(on) | Turn-On Delay Time | / | 150 | / | |||
tr | Rise Time | / | 38 | / | VDS=800V, VGS=-4V/18V, ID=40A RG(ext)=2.5Ω, RL=20Ω | ||
td(off) | Turn-Off Delay Time | / | 108 | / | ns | ||
tf | Fall Time | / | 35 | / | |||
RG(int) | Internal Gate Resistance | / | 2.3 | / | Ω | f=1MHz, VAC=25mV | |
QGS | Gate to Source Charge | / | 60 | / | VDS=800V | ||
QGD | Gate to Drain Charge | / | 44 | / | nC | VGS=-4V/18V | |
QG | Total Gate Charge | / | 242 | / | ID=40A |
Kemasan Ukuran
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.