2000V thyristor kk fast thyristor techsem
dapatkan harga terbaruJenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-KK2000A2000V-1
Merek: YZPST
Tipe paket | : | 1. Kemasan anti-elektrostatik 2. Kotak karton 3. Kemasan pelindung plastik |
THYRISTOR DAYA TINGGI UNTUK PENGENDALIAN FASE
YZPST-KK2000A2000V
Fitur:
. Semua Struktur Tersebar
. Konfigurasi Gerbang Amplifikasi Tengah
. Dijamin Maksimal Turn-Off Time
. Kemampuan dV / dt tinggi
. Perangkat Tekanan Rakitan
Catatan:
Semua peringkat ditentukan untuk Tj = 25 oC kecuali
dinyatakan lain.
(1) Semua peringkat tegangan ditentukan untuk diterapkan
50Hz / 60zHz bentuk gelombang sinusoidal di atas
kisaran suhu -40 hingga +125 oC.
(2) 10 msec. maks. lebar pulsa
(3) Nilai maksimum untuk Tj = 125 oC.
(4) Nilai minimum untuk linier dan eksponensial
waveshape hingga 80% dinilai VDRM. Gerbang terbuka.
Tj = 125 oC.
(5) Nilai tidak berulang.
(6) Nilai di / dt ditetapkan sesuai
dengan EIA / NIMA Standard RS-397, Bagian
5-2-2-6. Nilai yang ditentukan akan ditambahkan
Untuk itu diperoleh dari sirkuit snubber,
terdiri dari kapasitor 0,2 F dan 20 ohm
perlawanan paralel dengan thristor di bawah
uji.
KARAKTERISTIK LISTRIK DAN PERINGKAT
Blocking - Off State
VRRM (1) |
VDRM (1) |
VRSM (1) |
2000 |
2000 |
2100 |
V RRM = Tegangan balik puncak berulang
V DRM = Puncak tegangan kondisi mati berulang
V RSM = Tegangan balik puncak non-berulang (2)
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
15 mA 65 mA (3) |
Critical rate of voltage rise |
dV/dt (4) |
500 V/msec |
Melakukan - pada negara
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
2000 |
|
A |
Sinewave,180o conduction,Tc=55oC |
RMS value of on-state current |
ITRMSM |
|
3140 |
|
A |
Nominal value |
Peak one cycle surge (non repetitive) current |
ITSM |
|
-
14.6 |
|
KA
KA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.06x106 |
|
A2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I =2.5 A |
Peak on-state voltage |
VTM |
|
2.6 |
|
V |
ITM = 4000 A; Duty Cycle £ 0.01%; Tj =25 oC |
Threshold vlotage |
VT0 |
|
- |
|
V |
|
Slope resistance |
rT |
|
- |
|
mΩ |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
400 |
|
A/ms |
Switching from VDRM £ 1000 V |
KARAKTERISTIK LISTRIK DAN PERINGKAT
Gating
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
10 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
- 150 - |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
|
- 3 -
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
5 |
|
V |
|
Dinamis
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
1.5 |
0.7 |
ms |
ITM =50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
35 |
|
ms |
ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
* |
400 |
mC |
ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V |
* Untuk maks dijamin. nilai, hubungi pabrik.
KARAKTERISTIK DAN PERINGKAT TERMAL DAN MEKANIK
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
23 45 |
|
oC/KW |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
10 20 |
|
oC/KW |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
24.5 |
26.7 |
|
kN |
|
Weight |
W |
|
|
460 |
g |
About |
* Permukaan pemasangan halus, rata dan berlemak
GARIS BESAR DAN DIMENSI
Sym |
A |
B |
C |
D |
H |
mm |
75 |
47 |
66 |
3.5×3 |
26±1 |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.