1600V Perakitan thyristor daya tinggi untuk kontrol fase

Parameter

Symbol

Maximu

m Limits

Units

Conditions

Repetitive peak reverse voltage

V RRM

1600

V

Repetitive peak off state voltage

V DRM

1600

V

Average value of on-state current

I T(AV)

641

A

Sinewave,180 ^o conduction,T sink =70 ℃

Peak one cycle surge

(non repetitive) current

I TSM

9900

A

10.0 msec (50Hz), sinusoidal wave-shape,

180 o conduction, T j = 125 ℃

I RRM

30

mA

Tj = 125 ℃

I DRM

30

mA

Tj = 125 ℃

Peak on-state voltage

V TM

1.5

V

Tj = 125 ℃ ITM=1000A

Threshold voltage

V T(TO)

0.99

V

T j =1 25 ℃

Slope resistance

r T

0.52

mΩ

T j =1 25 ℃

Average gate power dissipation

P G(AV)

3

W

Gate current

I GT

300

mA

V D = 6 V;R L = 3 ohms;T j = +25 ℃

Gate voltage

V GT

3.5

V

V D = 6 V;R L = 3 ohms;T j = 0-125 ℃

Latching current

I L

1000

mA

V D = 24 V; R L = 12 ohms

Holding current

I H

300

mA

V D = 24 V; I = 2.5 A

Critical rate of voltage rise

dV/dt

1000

V/s

VD=2/3VDRM

Critical rate of rise of on-state

current

di/dt

200

A/ s

Switching from V DRM 1000 V,

non-repetitive

Operating temperature

T

-30-125

℃

Storage temperature

T stg

-30-125

℃