Ke-247 konverter DC-AC Komplementer NPN transistor

dapatkan harga terbaru

Deskripsi Produk

Atribut Produk

Model No: YZPST-2SDW100

Merek: YZPST

Deskripsi Produk

Darlington transistor daya komplementer

YZPST-2SDW100

fitur

■ Transistor NPN - PNP komplementer

■ Konfigurasi Monolitik Darlington

Aplikasi

■ Penguat daya audio

■ Konverter DC-AC

■ Penggerak motor DC tegangan rendah

■ Aplikasi pengalihan tujuan umum

Deskripsi

Perangkat ini diproduksi dalam teknologi planar dengan layout [base island] dan konfigurasi Darlington monolitik.

T a b le 1 D e v i c e s ummary

Order code

Marking

Package

Packaging

2SDW100

TO-247

Tube

2SDW200

1 Mutlak maxi m un peringkat

T a b le 2 Ab s o l ut e m a x i m u m ra ti ngs

Symbol	Parameter	Value		Unit
		NPN	2SDW100
		PNP	2SDW200
VCBO	Collector-emitter voltage (IE = 0)		80	V
VCEO	Collector-emitter voltage (IB = 0)		80	V
IC	Collector current		25	A
ICM	Collector peak current (tP < 5 ms)		40	A
IB	Base current		6	A
IBM	Base peak current (tP < 5 ms)		10	A
PTOT	Total dissipation at Tc ≤ 25 °C		130	W
TSTG	Storage temperature		-65 to 150	°C
TJ	Max. operating junction temperature		150	°C

Tidak t e : F atau PN P ty p e v ol t a ge a nd c u r r e nt v al u e s a r e n e g a ti v e

T a b le 3 T herm al d ta

Symbol	Parameter	Value	Unit
RthJC	Thermal resistance junction-case max	0.96	°C/W

2 Listrik c h aracteristics

T ca s e = 2 5 ° C; kecuali kalau w lainnya spe c ified.

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
ICBO	Collector cut-off current (IE = 0)	VCE = 80 V			0.5	mA
ICEV	Collector cut-off current (VBE = - 0.3 V)	VCE = 80 V			0.1	mA
ICEO	Collector cut-off current (IB = 0)	VCE = 60 V			0.5	mA
IEBO	Emitter cut-off current (IC = 0)	VEB = 5 V			2	mA
VCEO(sus) (1)	Collector-emitter sustaining voltage (IB = 0)	IC = 50 mA	80			V
VCE(sat)(1)	Collector-emitter saturation voltage	IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA			1.2 1.75 3.5	V V V
VBE(sat)(1)	Base-emitter saturation voltage	C B			3.3	V
(1)	Base-emitter voltage	I = 10 A V = 3 V	1		3	V
hFE(1)	DC current gain	IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V	600 500 300		15000 12000 6000
VF(1)	Diode forward voltage	IF = 10 A		TBD		V
Is/b	Second breakdown current	VCE = 25 V t = 500 ms		TBD		A

T a b le 4 . E l e c tr i c al c h ra c t e r i s t i cs

Symbol	Parameter	Test conditions	Min.	Typ.	Max.	Unit
ICBO	Collector cut-off current (IE = 0)	VCE = 80 V			0.5	mA
ICEV	Collector cut-off current (VBE = - 0.3 V)	VCE = 80 V			0.1	mA
ICEO	Collector cut-off current (IB = 0)	VCE = 60 V			0.5	mA
IEBO	Emitter cut-off current (IC = 0)	VEB = 5 V			2	mA
VCEO(sus) (1)	Collector-emitter sustaining voltage (IB = 0)	IC = 50 mA	80			V
VCE(sat)(1)	Collector-emitter saturation voltage	IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA			1.2 1.75 3.5	V V V
VBE(sat)(1)	Base-emitter saturation voltage	C B			3.3	V
(1)	Base-emitter voltage	I = 10 A V = 3 V	1		3	V
hFE(1)	DC current gain	IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V	600 500 300		15000 12000 6000
VF(1)	Diode forward voltage	IF = 10 A		TBD		V
Is/b	Second breakdown current	VCE = 25 V t = 500 ms		TBD		A

1. Tes pulsa: durasi pulsa ≤ 300 µs, siklus kerja ≤ 2%.

Untuk tipe PNP, nilai tegangan dan arus negatif.

UNTUK- 2 4 7 M e ch a ni c a l data