YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat disk semikonduktor (tipe kapsul)> Reverse Melakukan Thyristor (RCT)> FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT

FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT

$10001-19 Piece/Pieces

$600≥20Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Min. Memesan:1 Piece/Pieces
Transportasi:Ocean,Air
Pelabuhan:Shanghai
Deskripsi Produk
Atribut Produk

Model NoYZPST-FR1000AX50

MerekYZPST

私域 fr1000ax50 截取 视频 15m 秒 1-4.25m
私域 fr1000ax50 截取 视频 15 秒 2-3.6m
Deskripsi Produk


FR1000AX50 Fast Switching Reverse-conduct Thyristor

RCT UNTUK APLIKASI INVERTER DAN CHOPPER

2500 V DRM; 1550 A rms

YZPST-FR1000AX50

Fitur:

. Semua Struktur Tersebar

. Konfigurasi Gerbang Penguat Interdigitated

. Kemampuan memblokir hingga 2.500 volt

. Dijamin Maksimal Turn-Off Time

. Kemampuan dV / dt tinggi

. Perangkat Rakitan Tekanan


KARAKTERISTIK LISTRIK DAN PERINGKAT

Blocking - Off State

Device Type

VDRM (1)

VDSM (1)

FR1000AX50

2500

2500


VDRM = Puncak tegangan kondisi mati berulang

Repetitive peak off state leakage

IDRM

 

20 mA

80mA (3)

Critical rate of voltage rise

dV/dt (4)

700 V/msec


Catatan:

Semua peringkat ditentukan untuk Tj = 25 o C kecuali

dinyatakan lain.

(1) Semua peringkat tegangan ditentukan untuk diterapkan

50Hz / 60zHz bentuk gelombang sinusoidal di atas

kisaran suhu -40 hingga +125 o C.

(2) 10 msec. maks. lebar pulsa

(3) Nilai maksimum untuk Tj = 125 o C.

(4) Nilai minimum untuk linier dan eksponensial

waveshape hingga 80% berperingkat V DRM . Gerbang terbuka.

Tj = 125 o C.

(5) Nilai tidak berulang.

Melakukan - pada negara

Parameter

Symbol

 

Max.

Typ.

Units

Conditions

RMS value of on-state current

ITRMS

 

1550

 

A

Nominal value

Average on-state current

IT(AV)

 

 

   

1000

 

 

A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge

(non repetitive) current

 

ITSM

 

 

14000

 

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

8.2.x105

 

A2s

8.3 msec and 10.0 msec

RNS reverse currrnt

IR(RMS)

 

630

 

A

 

Average reverse current

IR(AV)

 

    400

 

A

Continuous single-phase,half sine wave,180°conduction

Peak on-state voltage

VTM

 

2.2

 

 

V

ITM=1000A Tj = 125 oC

Peak reverse voltage

VRM

 

 

4.0

 

V

IRM=1200A, Tj = 125 oC

Critical rate of rise of on-state

current

di/dt

 

      300

 

A/ms

VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125      

Critical rate of decrease of reverse conmmutating current

(di/dt)C

 

200

 

A/ms

ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125,Saturable reactor7500v.us

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

8

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

350

 

 

mA

 

 

VD = 6 V;RL = 2 ohms;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT

 

 

 

4

 

 

 

V

 

VD = 6 V;RL = 2 ohms;Tj = 25oC

 

Peak non- trigger voltage

VGD

 

0.2

 

V

Tj = 125 oC;VD=1/2VDRM

Dinamis

Parameter

Symbol

.

Max.

Typ.

Units

Conditions

Turn-off time  

tq

 

    50

 

        

 

ms

ITM =4000 A; di1/dt = -200A/ms;

di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V

Tj = 125 oC;tw=60us

 

 

 

 

 

 

KARAKTERISTIK DAN PERINGKAT TERMAL DAN MEKANIK

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thyristor part thermal resistance - junction to fin

RQ (j-f)

 

0.022

 

 

oC/W

Double sided cooled

 

Diode part thermal resistamce – junction to fin

RQ (j-f)

 

0.070

 

 

oC/W

Double sided cooled

 

Mounting force

P

 

45

 

kN

 

Weight

W

 

670

 

g

YZPST-FR1000AX50-1














Rumah> Produk> Perangkat disk semikonduktor (tipe kapsul)> Reverse Melakukan Thyristor (RCT)> FR1000AX50 Fast Switching Reverse-conduct Thyristor RCT
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