YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat disk semikonduktor (tipe kapsul)> Tahap Kontrol Thyristor> Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors

Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors

$452-49 Piece/Pieces

$39≥50Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:Shanghai
Atribut Produk

Model NoYZPST-T171-320-10

MerekYzpst

Jenis SuplaiProdusen asli

Bahan ReferensiFoto, lain

KonfigurasiHimpunan

Kerusakan Saat IniTak dapat diterapkan

Suhu Operasional-40 ° C ~ 125 ° C

Jenis SCRGerbang Sensitif

StrukturTunggal

Voltase MenyalaTak dapat diterapkan

Pemicu Gerbang Tegangan (Vgt) (maksimum)Tak dapat diterapkan

Output Saat Ini (maksimum)Tak dapat diterapkan

ITRMS502A

ITSM7kA

IH300mA

& pengiriman paket
Menjual unit : Piece/Pieces
Unduh :
私 域 T171-320-10.MP4
Deskripsi Produk

Thyristor Kontrol Fase

YZPST-T171-320-10

Fitur

Konfigurasi Gerbang Penguat Pusat

Enkapsulasi terikat kompresi

Kemampuan DV/DT Tinggi

Jenis stud, thread inci atau metrik

Aplikasi khas

Switching daya sedang

Catu Daya DC

Peringkat dan karakteristik maksimum

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

 

 

 

ITAV

Mean on-state current

320

A

Sinewave,180° conduction,Tc=84oC

ITRMS

RMS value of on-state current

502

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

7

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

240

KA2s

8.3 msec and 10.0 msec

IL

Latching current

700

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

300

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.6

V

ITM = 1005 A

di/dt

Critical rate of rise

of on-state current

non-repetitive

1000

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

-

BLOCKING

 

 

 

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1000

V

 

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1100

V

 

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

70

mA

Tj = 100 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

 

 

 

PG(AV)

Average gate power dissipation

3

W

 

PGM

Peak gate power dissipation

-

W

 

IGM

Peak gate current

6

A

 

IGT

Gate trigger current

250

mA

TC = 25 oC

VGT

Gate trigger voltage

2.5

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.6

V

Tj = 125 oC

VT0

 

1.006

V

Tj = 125 oC

rT

 

0612

 

SWITCHING

 

 

 

tq

Turn-off time

125

ms

ITM=320A, TJ=TJmax, di/dt=10A/μs,

VR=100V,dv/dt=50V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Termal dan mekanik

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

 

Tstg

Storage temperature

-40~125

oC

 

R th (j-c)

Thermal resistance - junction to case

0.085

oC/W

DC operation Single sided cooled

R th (c-s)

Thermal resistance - case to sink

-

oC/W

Single sided cooled

P

Mounting force

-

Nm

± 10 %

W

Weight

440

g

about


GARIS BESAR

High dV/dt Capability 320A Phase Control Thyristors


Rumah> Produk> Perangkat disk semikonduktor (tipe kapsul)> Tahap Kontrol Thyristor> Kemampuan DV/DT Tinggi Kontrol Fase 320A Thyristors
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