Perangkat Rakitan Tekanan High Power thyristor 4500V

Perangkat Rakitan Tekanan High Power thyristor 4500V

$4101-9 Piece/Pieces

$310≥10Piece/Pieces

Jenis pembayaran:	L/C,T/T,Paypal
Inkoterm:	FOB,CFR,CIF
Min. Memesan:	1 Piece/Pieces
Transportasi:	Ocean,Air
Pelabuhan:	SHANGHAI

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Deskripsi Produk

Atribut Produk

& pengiriman paket

Deskripsi Produk

Atribut Produk

Model No: YZPST-R3708FC45V

Merek: YZPST

& pengiriman paket

Menjual unit	:	Piece/Pieces
Tipe paket	:	1. Kemasan anti-elektrostatik 2. Kotak karton 3. Kemasan pelindung plastik

私域 R3708FC45V 截取视频 15 秒 1-1.88MB.mp4

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Deskripsi Produk

THYRISTOR DAYA TINGGI UNTUK APLIKASI PENGENDALIAN FASE

YZPST-R3708FC45V

Fitur:

. Semua Struktur Tersebar

. Konfigurasi Gerbang Penguat Linier

. Kemampuan pemblokiran hingga 4.500 volt

. Dijamin Maksimal Turn-Off Time

. Kemampuan dV / dt tinggi

. Perangkat Rakitan Tekanan

Blocking - Off State

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
R3708FC45	4500	4500	4600

V RRM = Tegangan balik puncak berulang

V DRM

= Re p etiti v e p eak o ff negara vo lta g e

V RSM = N o n re p etiti v e p eak re v erse vo lta g e ( 2 )

Repetitive peak reverse leakage and off state leakage	IRRM / IDRM	200 mA (3)
Critical rate of voltage rise	dV/dt (4)	200 V/μsec

Melakukan - pada negara

bentuk gelombang untuk 80% dinilai V DRM . Gerbang Buka. Tj = 125 o C.

(5) Non-berulang nilai.

(6) Itu nilai dari di / dt didirikan di sesuai dengan EIA / NIMA Standar RS-397, Bagian

5-2-2-6. T h e nilai didefinisikan akan menjadi di tambahan untuk bahwa diperoleh dari Sebuah snubber sirkuit, co m p naik Sebuah 0,2 μ F kapasitor dan 20 oh m s resistensi di paralel dengan itu thristor sedang diuji.

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	IT(AV)		3708		A	Sinewave,180o conduction,TS=55oC
RMS value of on-state current	ITRMS		7364		A	TS=25oC
Peak one cpstcle surge (non repetitive) current	ITSM		50000		A	10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC
I square t	I2t		12.5x106		A2s	10.0 msec
Latching current	IL		1000		mA	VD = 12 V; RL= 12 ohms
Holding current	IH		450		mA	VD = 12 V; I = 2.5 A
Peak on-state voltage	VTM		2.1		V	ITM = 4000 A; Duty cpstcle ≤ 0.01% Tj = 125 oC
Critical rate of rise of on-state current (5, 6)	di/dt		250		A/μs	Switching from VDRM ≤ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		100		A/μs	Switching from VDRM ≤ 1000 V

LISTRIK KARAKTERISTIK DAN PERINGKAT R3708FC45 - Po w er Th y ristor

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		200		W	tp = 40 us
Average gate power dissipation	PG(AV)		5		W
Peak gate current	IGM		15		A
Gate current required to trigger all units	IGT	30	300 200 125		mA mA mA	VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC
Gate voltage required to trigger all units	VGT	0.30	5 3		V V V	VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC
Peak negative voltage	VGRM		15		V

D y Namic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	td			2.5	μs	ITM = 50 A; VD = 1500 V Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs
Turn-off time (with VR = -50 V)	tq			250	μs	ITM =4000 A; di/dt = 60 A/μs; VR =100 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us
Reverse recovery current	Irr				A	ITM =4000 A; di/dt = 60 A/μs; VR =100 V

PANAS DAN MEKANIS KARAKTERISTIK DAN PERINGKAT

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	Tj	-40	+125		oC
Storage temperature	Tstg	-40	+140		oC
Thermal resistance - junction to sink	RΘ (j-s)		0.0075 0.0150		o C/W	Double sided cooled Single sided cooled
Mounting force	P	98	113		kN
Weight	W			2.7	Kg.