YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat disk semikonduktor (tipe kapsul)> Tahap Kontrol Thyristor> 5200V bv driver thyristor bersertifikat
5200V bv driver thyristor bersertifikat
5200V bv driver thyristor bersertifikat
5200V bv driver thyristor bersertifikat
5200V bv driver thyristor bersertifikat
5200V bv driver thyristor bersertifikat
5200V bv driver thyristor bersertifikat

5200V bv driver thyristor bersertifikat

$6501-49 Piece/Pieces

$400≥50Piece/Pieces

Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Min. Memesan:1 Piece/Pieces
Transportasi:Ocean,Air
Pelabuhan:Shanghai
Deskripsi Produk
Atribut Produk

Model NoYZPST-5STP34N5200

MerekYZPST

私域 5STP34N5200 截取 视频 15 秒 (1) -4
私域 5STP34N5200 截取 视频 15 秒 (2) -4.76MB
Deskripsi Produk

THYRISTOR DAYA TINGGI UNTUK PENGENDALIAN FASE

YZPST-5STP34N5200



Fitur:

. Semua Struktur Tersebar

. Konfigurasi Gerbang Pusat Memperkuat

. Dijamin Maksimal Turn-Off Time

. Kemampuan dV / dt tinggi

. Perangkat Rakitan Tekanan

Blocking - Off State

VRRM (1)

VDRM (1)

VRSM (1)

5200

5200

5300

V RRM = Tegangan balik puncak berulang

V DRM = Puncak tegangan kondisi mati berulang

V RSM = Tegangan balik puncak tidak berulang (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

30 mA

95mA (3)

Critical rate of voltage rise

dV/dt (4)

2000 V/msec

Melakukan - pada negara

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. Average value of on-state current

IT(AV)M

 

3600

 

A

Sinewave,180o conduction TC = 70 oC

RMS value of on-state current

ITRMS

 

5850

 

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

ITSM

 

63

 

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

19.8×103

 

kA2s

Latching current

IL

 

500

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

125

 

mA

VD = 24 V; I =2.5 A

Peak on-state voltage

VTM

 

1.54

 

V

ITM =3000 A; Tvj=125

Threshold voltage

VTO

 

1.03

 

V

Tvj=125

Slope resistance

Rt

 

0.16

 

mΩ

Tvj=125

Critical rate of rise of on-state

current (5, 6)

di/dt

 

1000

 

A/ms

Switching from VDRM £ 1500 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

200

 

A/ms

Switching from VDRM £ 1500 V

KARAKTERISTIK LISTRIK DAN PERINGKAT (lanjutan)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

-

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

7

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

-

400

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

VGT

 

-

2.6

-

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

10

 

V

 

Dinamis

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

-

 

ms

ITM =50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

700

 

ms

ITM = 2000 A; di/dt = 1.5 A/ms;

VR ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% VDRM; VG = 0;

Tj = 125 oC; Duty cpstcle ³ 0.01%

Reverse recovery charge

Qrr

 

5200

 

mAs

ITM = 2000 A; di/dt = 1.5 A/ms;

VR ³200 V

* Untuk jaminan maks. nilai, hubungi pabrik.

KARAKTERISTIK DAN PERINGKAT TERMAL DAN MEKANIK

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+140

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

5.7

11.4

 

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

1

2

 

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to heatsink

RQ (j-s)

 

-

-

 

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

P

81

108

-

kN

 

Weight

W

-

-

2.9

Kg

 

* Permukaan pemasangan halus, rata dan berlemak

Catatan: untuk kerangka kasus dan dimensi, lihat gambar kerangka kasus di halaman terakhir dari Data Teknis ini

THYRISTOR 5STP34N52 (3)


Sym

A

B

C

D

H

mm

150

100

108

3.5×3

35±1




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