Disk Kampung Powerex Thyristor DCR804 Konfigurasi

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Deskripsi Produk

Atribut Produk

Model No: YZPST-DCR804

Merek: Yzpst

& pengiriman paket

Menjual unit	:	Others
Unduh	:

Deskripsi Produk

Kontrol fase thyristor kekuatan tinggi

YZPST-DCR804

Karakteristik Disk Kapsul Powerex Thyristor : Dijamin waktu mematikan maksimum . Perangkat yang dirakit tekanan

. Semua struktur yang tersebar . Kemampuan DV/DT tinggi . Kapabilitas pemblokiran hingga 2000 volt . Konfigurasi Gerbang Penguat Pusat

DCR804SG2121

Thyristor Daya Tinggi untuk Aplikasi Kontrol Fase

Fitur : . Semua struktur yang tersebar . Konfigurasi Gerbang Penguat Pusat . Kapabilitas Pemblokiran hingga 2000 Volt

. Dijamin waktu mematikan maksimum . Kemampuan DV/DT tinggi . Perangkat yang dirakit tekanan

Karakteristik dan peringkat listrik

Pemblokiran - Off State

VRRM (1)	VDRM (1)	VRSM (1)
2000	2000	2100

V _RRM = tegangan balik puncak berulang

V _DRM = Puncak Repetitive Off State Voltage

V _rsm = tegangan balik puncak non berulang (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM
/}I_DRM

15 mA

35 mA (3)

Critical rate of voltage rise (4)

dV/dt

200 V/msec

Thyristor DCR804 Configuration

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		900		A	Sinewave,180^o conduction,T_c=67^oC
RMS value of on-state current	I_TRMS		1400		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		13000 12000		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		700		KA²s	8.3 msec and 10.0 msec
Latching current	I_L		800		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		400		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.80		V	I_TM = 2200A; Duty cPSTCle £ 0.01%
Critical rate of rise of on-state current (5, 6)	di/dt		400		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		150		A/ms	Switching from V_DRM£ 1000 V

Karakteristik dan Peringkat Listrik (Cont`D)

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		10		A
Gate current required to trigger all units	I_GT		300 150 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.15	5 3		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		5		V

Dinamis

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		1.5	0.7	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		200	125	ms	I_TM = 500 A; di/dt = 25 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM = 500 A; di/dt = 25 A/ms; V_R³ -50 V

* Untuk Max yang Dijamin. Nilai, hubungi pabrik.

Karakteristik dan peringkat termal dan mekanis

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		0.040 0.080		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		0.015 0.030		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	13.3	15.5		kN
Weight	W			225	g