KP800A Disc Thyristor 1800v
dapatkan harga terbaruJenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | Shanghai |
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | Shanghai |
Model No: YZPST-KP800A 1800V
Merek: YZPST
Thyristor Kontrol Fase
YZPST-KP800A1800V
Phase Control Thyristor 1900V banyak digunakan di semua jenis peralatan elektronik dan produk elektronik. Ini digunakan untuk penyearah terkontrol, inverter, konversi frekuensi, pengaturan tegangan dan sakelar tanpa kontak. Peralatan listrik rumah tangga dalam cahaya peredupan, kipas kecepatan, AC, perangkat TV, lemari es, mesin cuci, kamera, gabungan suara, cahaya dan rangkaian suara pengontrol waktu, perangkat mainan, remote control nirkabel, kamera, dan perangkat thyristor banyak digunakan dalam kontrol industri, dll.
Thyristor |
Ratings |
||||||
Symbol |
Definition |
Conditions |
|
min. |
typ. |
max. |
Unit |
V EQ \F(RSM,DSM) |
max. non-repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1900 |
V |
|
V EQ \F(RRM,DRM) |
max. repetitive reverse/forward blocking voltage |
TJ = 25°C |
|
|
1800 |
V |
|
VT |
On-state voltage |
IT=1500 A |
TJ = 25°C |
|
|
1.70 |
V |
IT(AV) |
average forward current |
TC=25°C |
|
|
|
800 |
A |
IT(RMS) |
RMS forward current |
180° sine |
|
|
|
2214 |
A |
RthJC |
thermal resistance junction to case |
|
|
|
|
|
K/W |
RthCH |
thermal resistance case to heatsink |
|
|
|
|
|
K/W |
RthJK |
thermal resistance junction to heatsink |
|
|
|
|
0.032 |
K/W |
ITSM |
max. forward surge current |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
12.7 |
kA |
I²t |
value for fusing |
t = 10 ms; (50 Hz), sine |
TJ = 25°C |
|
|
806 |
kA²s |
di/dt |
Rate of rise of on-state current |
TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= ⅔VDRM |
repetitive |
|
|
500 |
A/µs |
non-repet |
|
|
1000 |
A/µs |
|||
dv/dt |
Maximum linear rate of rise of off-state voltage |
VD= ⅔VDRM RGK =∞; method 1 (linear voltage rise) |
TJ = 125°C |
|
|
1000 |
V/µs |
VGT |
gate trigger voltage |
VD = 6V |
TJ = 25°C |
|
|
3.0 |
V |
IGT |
gate trigger current |
VD = 6V |
TJ = 25°C |
|
|
300 |
mA |
IL |
latching current |
|
TJ = 25°C |
|
|
|
A |
IH |
holding current |
|
TJ = 25°C |
|
|
500 |
mA |
tgd |
gate controlled delay time |
|
TJ = 25°C |
|
|
2.5 |
µs |
tq |
Turn-off time |
VR=10 V; IT=20A; VD=⅔VDRM |
TJ = 150°C |
|
200 |
400 |
µs |
Tstg |
storage temperature |
|
|
-40 |
|
125 |
°C |
TJ |
virtual junction temperature |
|
|
-40 |
|
125 |
°C |
Wt |
Weight |
|
|
|
|
|
g |
F |
mounting force |
|
|
10 |
|
20 |
kN |
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