YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Rumah> Produk> Perangkat pejantan semikonduktor> Fase kontrol pejantan thyristor> Frekuensi tinggi enkapsulasi daya thyristor
Frekuensi tinggi enkapsulasi daya thyristor
Frekuensi tinggi enkapsulasi daya thyristor
Frekuensi tinggi enkapsulasi daya thyristor

Frekuensi tinggi enkapsulasi daya thyristor

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Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:Shanghai
Atribut Produk

Model NoYZPST-T700123503BY

MerekYzpst

& pengiriman paket
Menjual unit : Others
Unduh :
Deskripsi Produk


Thyristor Kontrol Fase

YZPST-T700123503BY

Fitur dari fase kontrol thyristor: konfigurasi gerbang penguat tengah, enkapsulasi terikat kompresi, kemampuan DV/DT tinggi dan tipe stud, inci utas atau metrik. Aplikasi khas thyristor frekuensi tinggi adalah switching daya sedang dan catu daya DC.


Peringkat dan karakteristik maksimum

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

350

A

Sinewave,180° conduction,Tc=85

ITRMS

RMS value of on-state current

550

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9.1

KA

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

416

KA2s

8.3 msec and 10.0 msec

IL

Latching current

-

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

-

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.4

V

ITM = 625 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

800

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

150

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1200

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1300

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

30

mA

Tj = 125 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

1000

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

3

W

PGM

Peak gate power dissipation

16

W

IGM

Peak gate current

-

A

IGT

Gate trigger current

150

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.15

V

Tj = 125 oC

SWITCHING

tq

Turn-off time

150

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs,

VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Qrr

Reverse recovery charge

-

Termal dan mekanik

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

Tstg

Storage temperature

-40~150

oC

R th (j-c)

Thermal resistance - junction to case

0.1

oC/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.05

oC/W

Single sided cooled

P

Mounting force

3.5

Nm

W

Weight

-

g

about

Gambar terperinci
High Frequency Thyristors

Rumah> Produk> Perangkat pejantan semikonduktor> Fase kontrol pejantan thyristor> Frekuensi tinggi enkapsulasi daya thyristor
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