High Power Fast Recovery Diode
dapatkan harga terbaruJenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Jenis pembayaran: | L/C,T/T,Paypal |
Inkoterm: | FOB,CFR,CIF |
Transportasi: | Ocean,Air |
Pelabuhan: | SHANGHAI |
Model No: YZPST-SD233N/R
Merek: YZPST
High Power FAST Recovery Diode
DIODES PEMULIHAN CEPAT, Versi Stud
Fitur : Kekuatan tinggi CEPAT pemulihan diode seri, 1,0-2,0 μs waktu pemulihan, peringkat tegangan tinggi hingga 5000V, Kemampuan arus tinggi, Optimized menghidupkan dan mematikan karakteristik, Lo w forward recovery, Fast and soft reverse recover, Compression bonded encapsulation, Stud versi B-8, Maksimum junction temperature 125 ° C
Aplikasi Khas: Snubber diode untuk GTO, pemulihan cepat, aplikasi penyearah
Forward Conduction
Parameters |
PSTSD233N/R |
Units |
Conditions |
||
IF(AV Max. average forward current
@ Case temperature |
250 |
A |
180° conduction, half sine wave |
||
60 |
°C |
||||
IF(RMX) Max. RMS forward current |
390 |
A |
|
|
|
IFSM Max. peak, one-cycle forward
non-repetitive surge current |
5500 |
A |
t = 10ms |
No voltage
reapplied |
Initial TJ =TJmax. |
5760 |
A |
t = 8.3ms |
|||
I2t Maximum I2t for fusing |
150000 |
A2s |
t = 10ms |
No voltage
reapplied |
|
140000 |
A2s |
t = 8.3ms |
|||
I2√t Maximum I2√t for fusing |
1500000 |
KA2√s |
I2t for time tx = I2√t x √tx ;
0.1 ≤ tx ≤ 10ms, VRRM = 0V |
||
VFM Maximum forward voltage drop |
3.0 |
V |
TJ = 25 oC, IFM = 1200 (arm) |
||
IRRM Max. DC reverse current |
10.0 |
μA |
TJ = 25 oC, per diode at VRRM |
||
Trr |
5 |
μs |
|
Garis Besar Tabel
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