YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
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High Power Fast Recovery Diode
High Power Fast Recovery Diode
High Power Fast Recovery Diode

High Power Fast Recovery Diode

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Jenis pembayaran:L/C,T/T,Paypal
Inkoterm:FOB,CFR,CIF
Transportasi:Ocean,Air
Pelabuhan:SHANGHAI
Deskripsi Produk
Atribut Produk

Model NoYZPST-SD233N/R

MerekYZPST

Deskripsi Produk

High Power FAST Recovery Diode

DIODES PEMULIHAN CEPAT, Versi Stud

Fitur : Kekuatan tinggi CEPAT pemulihan diode seri, 1,0-2,0 μs waktu pemulihan, peringkat tegangan tinggi hingga 5000V, Kemampuan arus tinggi, Optimized menghidupkan dan mematikan karakteristik, Lo w forward recovery, Fast and soft reverse recover, Compression bonded encapsulation, Stud versi B-8, Maksimum junction temperature 125 ° C

Aplikasi Khas: Snubber diode untuk GTO, pemulihan cepat, aplikasi penyearah


High Power FAST Recovery Diode YZPST-SD233NR (1)

High Power FAST Recovery Diode


Forward Conduction


Parameters

PSTSD233N/R

Units

Conditions

IF(AV              Max. average forward current

 

@ Case temperature

250

A

180° conduction, half sine wave

60

°C

IF(RMX)           Max. RMS forward current

390

A

 

 

 

IFSM               Max. peak, one-cycle forward

 

non-repetitive surge current

5500

A

t = 10ms

No voltage

 

reapplied

Initial TJ =TJmax.

5760

A

t = 8.3ms

I2t             Maximum I2t for fusing

150000

A2s

t = 10ms

No voltage

 

reapplied

140000

A2s

t = 8.3ms

I2t          Maximum I2t for fusing

 

1500000

KA2√s

I2t for time tx = I2t x tx ;

 

0.1 tx 10ms, VRRM = 0V

VFM                Maximum forward voltage drop

3.0

V

TJ = 25 oC, IFM = 1200 (arm)

IRRM               Max. DC reverse current

10.0

μA

TJ = 25 oC, per diode at VRRM

Trr

5

μs




Garis Besar Tabel


High Power FAST Recovery Diode


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